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Laser Enhanced Doping For Silicon Carbide White Light Emitting Diodes, Sachin Bet
Laser Enhanced Doping For Silicon Carbide White Light Emitting Diodes, Sachin Bet
Electronic Theses and Dissertations
This work establishes a solid foundation for the use of indirect band gap semiconductors for light emitting application and presents the work on development of white light emitting diodes (LEDs) in silicon carbide (SiC). Novel laser doping has been utilized to fabricate white light emitting diodes in 6H-SiC (n-type N) and 4H-SiC (p-type Al) wafers. The emission of different colors to ultimately generate white light is tailored on the basis of donor acceptor pair (DAP) recombination mechanism for luminescence. A Q-switched Nd:YAG pulse laser (1064 nm wavelength) was used to carry out the doping experiments. The p and n regions …