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Luminescence Properties Of Defects In Gan, Michael A. Reshchikov, Hadis Morkoç
Luminescence Properties Of Defects In Gan, Michael A. Reshchikov, Hadis Morkoç
Electrical and Computer Engineering Publications
Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these …
A Comprehensive Review Of Zno Materials And Devices, Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, Vitaliy Avrutin, S.-J. Cho, H. Morkoç
A Comprehensive Review Of Zno Materials And Devices, Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, Vitaliy Avrutin, S.-J. Cho, H. Morkoç
Electrical and Computer Engineering Publications
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with …
Unusual Luminescence Lines In Gan, M. A. Reshchikov, D. Huang, F. Yun, P. Visconti, L. He, H. Morkoç, J. Jasinski, Z. Liliental-Weber, R. J. Molnar, S. S. Park, K. Y. Lee
Unusual Luminescence Lines In Gan, M. A. Reshchikov, D. Huang, F. Yun, P. Visconti, L. He, H. Morkoç, J. Jasinski, Z. Liliental-Weber, R. J. Molnar, S. S. Park, K. Y. Lee
Electrical and Computer Engineering Publications
A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the structural- and surface-related peaks (at 3.21, 3.32, 3.34, 3.35, 3.38, and 3.42 eV) were observed in Ga polar films. In N polar GaN, we often observed the 3.45 eV peak attributed to excitons bound to the inversion domain interfaces.