Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 3 of 3
Full-Text Articles in Engineering
Effectiveness Of Tin Porous Templates On The Reduction Of Threading Dislocations In Gan Overgrowth By Organometallic Vapor-Phase Epitaxy, Y. Fu, Y.-T. Moon, F. Yun, Ü. Özgür, J. Xie, S. Doğan, Hadis Morkoç, C. K. Inoki, T. S. Kuan, Lin Zhou, David J. Smith
Effectiveness Of Tin Porous Templates On The Reduction Of Threading Dislocations In Gan Overgrowth By Organometallic Vapor-Phase Epitaxy, Y. Fu, Y.-T. Moon, F. Yun, Ü. Özgür, J. Xie, S. Doğan, Hadis Morkoç, C. K. Inoki, T. S. Kuan, Lin Zhou, David J. Smith
Electrical and Computer Engineering Publications
We report on the reduction of threading dislocations in GaN overlayers grown by organometallic vapor phase epitaxy on micro-porous TiN networks. These networks were obtained by in situannealing of thin Ti layers deposited in a metalization chamber, on the (0001) face of GaN templates. Observations by transmission electron microscopy indicate dislocation reduction by factors of up to 10 in GaN layers grown on TiN networks compared with the control GaN.X-ray diffraction shows that GaNgrown on the TiN network has a smaller (102) plane peak width (4.6 arcmin) than the control GaN (7.8 arcmin). In low temperature photoluminescence spectra, a …
Efficacy Of Single And Double Sinx Interlayers On Defect Reduction In Gan Overlayers Grown By Organometallic Vapor-Phase Epitaxy, F. Yun, Y.-T. Moon, Y. Fu, K. Zhu, U. Ozgur, H. Morkoç, C. K. Inoki, T.S. Kuan, Ashutosh Sagar, R. M. Feenstra
Efficacy Of Single And Double Sinx Interlayers On Defect Reduction In Gan Overlayers Grown By Organometallic Vapor-Phase Epitaxy, F. Yun, Y.-T. Moon, Y. Fu, K. Zhu, U. Ozgur, H. Morkoç, C. K. Inoki, T.S. Kuan, Ashutosh Sagar, R. M. Feenstra
Electrical and Computer Engineering Publications
We report on the growth of and evolution of defects in GaN epilayers having single- and double-layer SiNx nanoporous insertion layers. The SiNx was formed in situ in the growth chamber of an organometallic vapor-phase epitaxy system by simultaneous flow of diluted silane and ammonia. The GaN epilayers and SiNx interlayers were grown on 6H-SiC substrates using three different nucleation layers, namely, low-temperature GaN, high-temperature GaN, and high-temperature AlN nucleation layers. X-ray-diffraction rocking curves and cross-sectional and plan-view transmission electron microscope analyses indicated that a nanoporous SiNx layer can reduce the dislocations density in the GaN overgrown layer to ∼3×108cm−2 …
Increased Carrier Lifetimes In Gan Epitaxial Films Grown Using Sin And Tin Porous Network Layers, Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt
Increased Carrier Lifetimes In Gan Epitaxial Films Grown Using Sin And Tin Porous Network Layers, Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt
Electrical and Computer Engineering Publications
Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on SiN and TiN porous network templates. The room-temperature decay times obtained from biexponential fits to time-resolved photoluminescence data are increased with the inclusion of SiN and TiN layers. The carrier lifetime of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200μm-thick high-quality freestanding GaN. The linewidth of the asymmetric x-ray diffraction (XRD) (101¯2) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct …