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Full-Text Articles in Engineering
Growth Optimization And Structural Analysis For Ferromagnetic Mn-Doped Zno Layers Deposited By Radio Frequency Magnetron Sputtering, M. Abouzaid, P. Ruterana, C. Liu, H. Morkoç
Growth Optimization And Structural Analysis For Ferromagnetic Mn-Doped Zno Layers Deposited By Radio Frequency Magnetron Sputtering, M. Abouzaid, P. Ruterana, C. Liu, H. Morkoç
Electrical and Computer Engineering Publications
The effect of the deposition temperature on the crystalline quality of (Zn,Mn)O is investigated in thin films prepared by radio frequency magnetronsputtering on c-plane sapphire and GaN substrates. The layers are made of a 0.5μm Mn-doped layer towards the surface on top of a 150nm pure ZnO buffer. Depending on the deposition temperature, the layers can exhibit a columnar structure; the adjacent domains are rotated from one another by 90°, putting [101¯0]and [11¯20] directions face to face. At high Mn concentration the columnar structure is blurred by the formation of Mn rich precipitates. Only one variety of domains is observed …
A Comprehensive Review Of Zno Materials And Devices, Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, Vitaliy Avrutin, S.-J. Cho, H. Morkoç
A Comprehensive Review Of Zno Materials And Devices, Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, Vitaliy Avrutin, S.-J. Cho, H. Morkoç
Electrical and Computer Engineering Publications
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with …
Unusual Luminescence Lines In Gan, M. A. Reshchikov, D. Huang, F. Yun, P. Visconti, L. He, H. Morkoç, J. Jasinski, Z. Liliental-Weber, R. J. Molnar, S. S. Park, K. Y. Lee
Unusual Luminescence Lines In Gan, M. A. Reshchikov, D. Huang, F. Yun, P. Visconti, L. He, H. Morkoç, J. Jasinski, Z. Liliental-Weber, R. J. Molnar, S. S. Park, K. Y. Lee
Electrical and Computer Engineering Publications
A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the structural- and surface-related peaks (at 3.21, 3.32, 3.34, 3.35, 3.38, and 3.42 eV) were observed in Ga polar films. In N polar GaN, we often observed the 3.45 eV peak attributed to excitons bound to the inversion domain interfaces.
Energy Band Bowing Parameter In Alxga1-Xn Alloys, Feng Yun, Michael A. Reshchikov, Lei He, Thomas King, Hadis Morkoç, Steve W. Novak, Luncun Wei
Energy Band Bowing Parameter In Alxga1-Xn Alloys, Feng Yun, Michael A. Reshchikov, Lei He, Thomas King, Hadis Morkoç, Steve W. Novak, Luncun Wei
Electrical and Computer Engineering Publications
Molecular-beam epitaxy grown AlxGa1−xN alloys covering the entire range of alloy compositions, 0⩽x⩽1, have been used to determine the alloy band gap dependence on its composition. The Alchemical composition was deduced from secondary ion mass spectroscopy and Rutherford backscattering. The composition was also inferred from x-ray diffraction. The band gap of the alloy was extracted from low temperature optical reflectance measurements which are relatively more accurate than photoluminescence. Fitting of the band gap data resulted in a bowing parameter of b=1.0 eV over the entire composition range. The improved accuracy of the composition and band gap determination …