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- BWR nuclear power plant (2)
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- Fuzzy C-means (FCM) clustering (1)
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Articles 1 - 13 of 13
Full-Text Articles in Engineering
Bagged Ensemble Of Fuzzy C-Means Classifiers For Nuclear Transient Identification, Piero Baraldi, Roozbeh Razavi-Far, Enrico Zio
Bagged Ensemble Of Fuzzy C-Means Classifiers For Nuclear Transient Identification, Piero Baraldi, Roozbeh Razavi-Far, Enrico Zio
Electrical and Computer Engineering Publications
This paper presents an ensemble-based scheme for nuclear transient identification. The approach adopted to construct the ensemble of classifiers is bagging; the novelty consists in using supervised fuzzy C-means (FCM) classifiers as base classifiers of the ensemble. The performance of the proposed classification scheme has been verified by comparison with a single supervised, evolutionary-optimized FCM classifier with respect of the task of classifying artificial datasets. The results obtained indicate that in the cases of datasets of large or very small sizes and/or complex decision boundaries, the bagging ensembles can improve classification accuracy. Then, the approach has been applied to the …
Classifier-Ensemble Incremental-Learning Procedure For Nuclear Transient Identification At Different Operational Conditions, Piero Baraldi, Roozbeh Razavi-Far, Enrico Zio
Classifier-Ensemble Incremental-Learning Procedure For Nuclear Transient Identification At Different Operational Conditions, Piero Baraldi, Roozbeh Razavi-Far, Enrico Zio
Electrical and Computer Engineering Publications
An important requirement for the practical implementation of empirical diagnostic systems is the capability of classifying transients in all plant operational conditions. The present paper proposes an approach based on an ensemble of classifiers for incrementally learning transients under different operational conditions. New classifiers are added to the ensemble where transients occurring in new operational conditions are not satisfactorily classified. The construction of the ensemble is made by bagging; the base classifier is a supervised Fuzzy C Means (FCM) classifier whose outcomes are combined by majority voting. The incremental learning procedure is applied to the identification of simulated transients in …
Furthering The Growth Of Cloud Computing By Providing Privacy As A Service, David S. Allison, Miriam Am Capretz
Furthering The Growth Of Cloud Computing By Providing Privacy As A Service, David S. Allison, Miriam Am Capretz
Electrical and Computer Engineering Publications
The evolution of Cloud Computing as a viable business solution for providing hardware and software has created many security concerns. Among these security concerns, privacy is often overlooked. If Cloud Computing is to continue its growth, this privacy concern will need to be addressed. In this work we discuss the current growth of Cloud Computing and the impact the public sector and privacy can have in furthering this growth. To begin to provide privacy protection for Cloud Computing, we introduce privacy constraints that outline privacy preferences. We propose the expansion of Cloud Service Level Agreements (SLAs) to include these privacy …
An Empirical Study Of Open Source Software Usability: The Industrial Perspective, Arif Raza, Luiz Fernando Capretz, Faheem Ahmed
An Empirical Study Of Open Source Software Usability: The Industrial Perspective, Arif Raza, Luiz Fernando Capretz, Faheem Ahmed
Electrical and Computer Engineering Publications
Recent years have seen a sharp increase in the use of open source projects by common novice users; Open Source Software (OSS) is thus no longer a reserved arena for software developers and computer gurus. Although user-centered designs are gaining popularity in OSS, usability is still not considered as one of the prime objectives in many design scenarios. In this paper, we analyze industry users’ perception of usability factors, including understandability, learnability, operability and attractiveness, on OSS usability. The research model of this empirical study establishes the relationship between the key usability factors and OSS usability from industrial perspective. In …
Degradation In Inaln/Aln/Gan Heterostructure Field-Effect Transistors As Monitored By Low-Frequency Noise Measurements: Hot Phonon Effects, C. Kayis, Romualdo A. Ferreyra, M. Wu, X. Li, Ü. Özgür, A. Matulionis, Hadis Morkoç
Degradation In Inaln/Aln/Gan Heterostructure Field-Effect Transistors As Monitored By Low-Frequency Noise Measurements: Hot Phonon Effects, C. Kayis, Romualdo A. Ferreyra, M. Wu, X. Li, Ü. Özgür, A. Matulionis, Hadis Morkoç
Electrical and Computer Engineering Publications
Low-frequency noise technique was applied to analyze performance of nearly lattice-matched InAlN/AlN/GaN heterostructure field-effect transistors and their degradation caused by electrical stress. Nearly identical devices from the same wafer have undergone a 7 h DC electrical stress at a fixed DC drain bias of VDS = 20 V and different gate biases. We noted up to 32 dB/Hz higher low-frequency noise for stressed devices over the entire frequency range of 1 Hz-100 kHz. The measurements showed the minimum degradation at a gate-controlled two-dimensional electron gas density of 9.4 × 1012 cm−2. This result is in good …
Camelback Channel For Fast Decay Of Lo Phonons In Gan Heterostructure Field-Effect Transistor At High Electron Density, E. Šermukšnis, J. Liberis, M. Ramonas, Jacob H. Leach, M. Wu, Vitaliy Avrutin, Hadis Morkoç
Camelback Channel For Fast Decay Of Lo Phonons In Gan Heterostructure Field-Effect Transistor At High Electron Density, E. Šermukšnis, J. Liberis, M. Ramonas, Jacob H. Leach, M. Wu, Vitaliy Avrutin, Hadis Morkoç
Electrical and Computer Engineering Publications
Fluctuation technique is used to measure hot-phonon lifetime in dual channel GaN-based configuration proposed to support high-power operation at high frequencies. The channel is formed of a composite Al0.1Ga0.9N/GaN structure situated in an Al0.82In0.18N/AlN/Al0.1Ga0.9N/GaN heterostructure. According to capacitance–voltage measurements and simultaneous treatment of Schrödinger–Poisson equations, the mobile electrons in this dual channel configuration form a camelback density profile at elevated hot-electron temperatures. The hot-phonon lifetime was found to depend on the shape of the electron profile rather than solely on its sheet density. The camelback channel with an …
Hybrid Spintronics And Straintronics: A Magnetic Technology For Ultra Low Energy Computing And Signal Processing, Kuntal Roy, Supriyo Bandyopadhyay, Jayasimha Atulasimha
Hybrid Spintronics And Straintronics: A Magnetic Technology For Ultra Low Energy Computing And Signal Processing, Kuntal Roy, Supriyo Bandyopadhyay, Jayasimha Atulasimha
Electrical and Computer Engineering Publications
The authors show that the magnetization of a 2-phase magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the basis of ultralow power computing and signal processing. With appropriate material choice, the energy dissipated per switching event can be reduced to ∼45 kT at room temperature for a switching delay of ∼100 ns and ∼70 kT for a switching delay of ∼10 ns, if the energy barrier separating the two stable magnetization directions is ∼32 kT. Such devices can be powered by harvesting energy exclusively from the …
Motional Modes In Bulk Powder And Few-Molecule Clusters Of Tris(8-Hydroxyquinoline Aluminum) And Their Relation To Spin Dephasing, Lopamurda Das, Jennette Mateo, Saumil Bandyopadhyay, Supriyo Bandyopadhyay, Jarrod D. Edwards, John Anderson
Motional Modes In Bulk Powder And Few-Molecule Clusters Of Tris(8-Hydroxyquinoline Aluminum) And Their Relation To Spin Dephasing, Lopamurda Das, Jennette Mateo, Saumil Bandyopadhyay, Supriyo Bandyopadhyay, Jarrod D. Edwards, John Anderson
Electrical and Computer Engineering Publications
The ensemble averaged spin dephasing rate of localized electrons in the organic molecule tris(8-hydroxyquinoline aluminum) or Alq3 has been found to be significantly larger in bulk powder than in single- or few-molecule clusters confined within 1–2 nm sized nanocavities [B. Kanchibotla et al., Phys. Rev. B78, 193306 (2008)]. To understand this observation, we have compared the midinfrared absorption spectra of bulk powder and single- or few-molecule clusters. It appears that molecules have additional vibrational modes in bulk powder possibly due to multimerization. Their coupling with spin may be responsible for the increased spin dephasing rate in bulk powder.
Switching Dynamics Of A Magnetostrictive Single-Domain Nanomagnet Subjected To Stress, Kuntal Roy, Supriyo Bandyopadhyay, Jayasimha Atulasimha
Switching Dynamics Of A Magnetostrictive Single-Domain Nanomagnet Subjected To Stress, Kuntal Roy, Supriyo Bandyopadhyay, Jayasimha Atulasimha
Electrical and Computer Engineering Publications
The temporal evolution of the magnetization vector of a single-domain magnetostrictive nanomagnet, subjected to in-plane stress, is studied by solving the Landau-Lifshitz-Gilbert equation. The stress is ramped up linearly in time, and the switching delay, which is the time it takes for the magnetization to flip, is computed as a function of the ramp rate. For high levels of stress, the delay exhibits a nonmonotonic dependence on the ramp rate, indicating that there is an optimum ramp rate to achieve the shortest delay. For constant ramp rate, the delay initially decreases with increasing stress but then saturates, showing that the …
Ultrafast Decay Of Hot Phonons In An Algan/Aln/Algan/Gan Camelback Channel, J. H. Leach, M. Wu, H. Morkoç, J. Liberis, E. Šermukšnis, M. Ramonas, A. Matulionis
Ultrafast Decay Of Hot Phonons In An Algan/Aln/Algan/Gan Camelback Channel, J. H. Leach, M. Wu, H. Morkoç, J. Liberis, E. Šermukšnis, M. Ramonas, A. Matulionis
Electrical and Computer Engineering Publications
A bottleneck for heat dissipation from the channel of a GaN-based heterostructure field-effect transistor is treated in terms of the lifetime of nonequilibrium (hot) longitudinal optical phonons, which are responsible for additional scattering of electrons in the voltage-biased quasi-two-dimensional channel. The hot-phonon lifetime is measured for an Al0.33Ga0.67N/AlN/Al0.1Ga0.9N/GaN heterostructure where the mobile electrons are spread in a composite Al0.1Ga0.9N/GaN channel and form a camelback electron density profile at high electric fields. In accordance with plasmon-assisted hot-phonon decay, the parameter of importance for the lifetime is not the total …
Field-Assisted Emission In Algan/Gan Heterostructure Field-Effect Transistors Using Low-Frequency Noise Technique, Cemil Kayis, C. Y. Zhu, Mo Wu, X. Li, Ümit Özgür, Hadis Morkoç
Field-Assisted Emission In Algan/Gan Heterostructure Field-Effect Transistors Using Low-Frequency Noise Technique, Cemil Kayis, C. Y. Zhu, Mo Wu, X. Li, Ümit Özgür, Hadis Morkoç
Electrical and Computer Engineering Publications
We utilized low-frequency noise measurements to probe electron capture and emission from the traps in AlGaN/GaN heterostructurefield-effect transistors as a function of drain bias. The excess noise-spectra due to generation-recombination effect shifted higher in frequency with the elevated temperature from room temperature up to 446 K. These temperature dependent noise measurements were carried out for four different drain-bias values from 4 up to 16 V with 4 V increments. The shift of the excess-noise in frequency was also seen with increasing drain bias. The characteristic recharging times for the trapped electrons varied within the range of 26 μs − …
Charge Storage Characteristics Of Ultra-Small Pt Nanoparticle Embedded Gaas Based Non-Volatile Memory, Reginald Jeff, M Yun, B Ramalingam, B Lee, V Misra, Gregory Edward Triplett, Shubhra Gangopadhyay
Charge Storage Characteristics Of Ultra-Small Pt Nanoparticle Embedded Gaas Based Non-Volatile Memory, Reginald Jeff, M Yun, B Ramalingam, B Lee, V Misra, Gregory Edward Triplett, Shubhra Gangopadhyay
Electrical and Computer Engineering Publications
Charge storage characteristics of ultra-small Pt nanoparticle embedded devices were characterized by capacitance-voltage measurements. A unique tilt target sputtering configuration was employed to produce highly homogenous nanoparticle arrays. Pt nanoparticle devices with sizes ranging from ∼0.7 to 1.34 nm and particle densities of ∼3.3–5.9 × 1012 cm−2 were embedded between atomic layer deposited and e-beam evaporated tunneling and blocking Al2O3 layers. These GaAs-based non-volatile memory devices demonstrate maximum memory windows equivalent to 6.5 V. Retention characteristics show that over 80% charged electrons were retained after 105 s, which is promising for device applications.
Reduced Auger Recombination In Mid-Infrared Semiconductor Lasers, Robert Bedford, Gregory Edward Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jorg Hader
Reduced Auger Recombination In Mid-Infrared Semiconductor Lasers, Robert Bedford, Gregory Edward Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jorg Hader
Electrical and Computer Engineering Publications
A quantum-design approach to reduce the Auger losses in two micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6 lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 and represents about a 19-fold reduction in the equivalent “Auger coefficient.”