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TEMPERATURE-DEPENDENCE; PHOTOLUMINESCENCE LIFETIME; EPITAXIAL LAYERS; ZINC-OXIDE; ENERGY; SEMICONDUCTORS; TRANSITIONS; POLARITON; SPECTRUM; FILMS
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Full-Text Articles in Engineering
Excitonic Fine Structure And Recombination Dynamics In Single-Crystalline Zno, A. Teke, Ü. Özgür, S. Doğan, X. Gu, Hadis Morkoç, B. Nemeth, J. Nause, H. O. Everitt
Excitonic Fine Structure And Recombination Dynamics In Single-Crystalline Zno, A. Teke, Ü. Özgür, S. Doğan, X. Gu, Hadis Morkoç, B. Nemeth, J. Nause, H. O. Everitt
Electrical and Computer Engineering Publications
The optical properties of a high quality bulk ZnO, thermally post treated in a forming gas environment are investigated by temperature dependent continuous wave and time-resolved photoluminescence (PL) measurements. Several bound and free exciton transitions along with their first excited states have been observed at low temperatures, with the main neutral-donor-bound exciton peak at 3.3605 eV having a linewidth of 0.7 meV and dominating the PL spectrum at 10 K. This bound exciton transition was visible only below 150 K, whereas the A-free exciton transition at 3.3771 eV persisted up to room temperature. A-free exciton binding energy of 60 meV …