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Surface Band Bending In As-Grown And Plasma-Treated N-Type Gan Films Using Surface Potential Electric Force Microscopy, Sang-Jun Cho, Seydi Doğan, Shahriar Sabuktagin, Michael A. Reshchikov, D. Johnstone, Hadis Morkoç

Electrical and Computer Engineering Publications

The surface band bending, as well as the effect of plasma-induced damage on band bending, on GaN surfaces, was investigated. The upward band bending, measured by surface potentialelectric force microscopy (a variant of atomic force microscopy), for the as-grown n -type GaNwas about 1.0 eV which increased to ∼1.4 eV after reactive ion etching (RIE). UV illuminationdecreased the band bending by 0.3 eV with time constants on the order of seconds and hundreds of seconds for the as-grown and RIE treated GaN, respectively. This implies that there is a higher density of the surface states in the samples subjected to …