Engineering Commons^™

Characterization Of Ingan/Gan Multi-Quantum-Well Blue-Light-Emitting Diodes Grown By Metal Organic Chemical Vapor Deposition, K. S. Ramaiah, Y. K. Su, S. J. Cheng, B. Kerr, H. P. Liu, I. G. Chen

Electrical and Computer Engineering Publications

The structural,surface morphology, and the temperature dependence photoluminescence of InGaN(3 nm)/GaN(7 nm) 5 period multi-quantum-well blue-light-emitting diode (LED)structures grown by metal organic chemical vapor deposition(MOCVD) have been studied. Quantum dot-likestructures and strain contrast evident by black lumps were observed in the quantum wells using high-resolution transmission electron microscopy(HRTEM) analysis. Double-crystal high-resolution x-ray diffraction (HRXRD) spectra of blue LED were simulated using kinematical theory method, to obtain composition, and period thickness of well and barrier. The “S” shape character shift as red–blue–redshift of the quantum-well emission line, i.e., blue emission peak 2.667 eV at 10 K, was observed with variation of …