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Full-Text Articles in Engineering
Mode Pattern Analysis Of Gallium Nitride-Based Laser Diodes, Xiaomin Jin, Sean Jobe, Simeon Trieu, Benafsh Husain, Jason Flickinger, Bei Zhang, Tao Dai, Xiang-Ning Kang, Guo-Yi Zhang
Mode Pattern Analysis Of Gallium Nitride-Based Laser Diodes, Xiaomin Jin, Sean Jobe, Simeon Trieu, Benafsh Husain, Jason Flickinger, Bei Zhang, Tao Dai, Xiang-Ning Kang, Guo-Yi Zhang
Electrical Engineering
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design.
Light Extraction Improvement Of Gan-Based Light Emitting Diodes Using Patterned Undoped Gan Bottom Reflection Gratings, Simeon Trieu, Xiaomin Jin, Bei Zhang, Tao Dai, Kui Bao, Xiang-Ning Kang, Guo-Yi Zhang
Light Extraction Improvement Of Gan-Based Light Emitting Diodes Using Patterned Undoped Gan Bottom Reflection Gratings, Simeon Trieu, Xiaomin Jin, Bei Zhang, Tao Dai, Kui Bao, Xiang-Ning Kang, Guo-Yi Zhang
Electrical Engineering
The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results are presented. A microstructure GaN bottom grating, either conical holes or cylindrical holes, was calculated and compared with the non-grating (flat) case. A time monitor was also placed just above the top of the LED to measure both time and power output from the top of the LED. Many different scenarios were simulated by sweeping three parameters that affected the structure of the micro-structure grating: unit cell period (A) from 1 to 6 microns, unit cell width (w) from 1 to 6 microns, and …