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Boron And Phosphorous Implantation Into (100) Germanium : Modeling And Investigation Of Dopant Annealing Behavior, Yong Seok Suh

Dissertations

Germanium is increasingly being considered at this time for future silicon compatible optoelectronic and complementary metal oxide semiconductor (CMOS) device application. Germanium implantation will be a critical process for future device fabrication. However, critical properties like Pearson parameters and dopant activation temperatures are not well established. In this study, boron and phosphorus were implanted into (100) germanium with energies ranging from 20 to 320 keV and doses of 5 x 10¹³ to 5 x 10¹⁶ cm^-2. The behavior of the boron and phosphorus before and after annealing for 3 hours at 400, 600 or 800°C in …