Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur
Faculty Publications
An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption.
Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications
We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.