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Design, Fabrication, And Characterization Of Pseudomorphic And Quasi-Pseudomorphic Algan Based Deep Ultraviolet Light Emitting Diodes Over Sapphire, Fatima Asif
Theses and Dissertations
III-Nitride based deep ultraviolet (UV) light emitting diodes (LEDs) emitting below 280nm has the potential to replace mercury lamps currently used in the systems for water/air purification, germicidal and medical instruments sterilization applications. However, this potential has not yet been fully realized as the output power, quantum efficiency and lifetime of deep UV-LEDs have been limited by the large number of dislocations in the active region of the devices, arising from the lattice mismatched sapphire substrate, which has been the substrate of choice due to its high transparency to deep UV radiation. To reduce dislocations in the active region of …