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Full-Text Articles in Engineering
Vi Energy-Efficient Memristor-Based Neuromorphic Computing Circuits And Systems For Radiation Detection Applications, Jorge Iván Canales Verdial
Vi Energy-Efficient Memristor-Based Neuromorphic Computing Circuits And Systems For Radiation Detection Applications, Jorge Iván Canales Verdial
Electrical and Computer Engineering ETDs
Radionuclide spectroscopic sensor data is analyzed with minimal power consumption through the use of neuromorphic computing architectures. Memristor crossbars are harnessed as the computational substrate in this non-conventional computing platform and integrated with CMOS-based neurons to mimic the computational dynamics observed in the mammalian brain’s visual cortex. Functional prototypes using spiking sparse locally competitive approximations are presented. The architectures are evaluated for classification accuracy and energy efficiency. The proposed systems achieve a 90% true positive accuracy with a high-resolution detector and 86% with a low-resolution detector.
Tunneling And Transport Properties Of Organic And Inorganic Thin Film, Farhana Anwar
Tunneling And Transport Properties Of Organic And Inorganic Thin Film, Farhana Anwar
Electrical and Computer Engineering ETDs
In this article I provide a new method for computing electronic transport properties of graphene i.e. the peculiar tunneling properties of two-dimensional massless Dirac electrons. I consider a simple situation : a massless Dirac electron incident on a potential barrier which is tilted by applied bias and use finite difference method to obtain transmission probability(without involving transfer matrix). In the presence of an applied bias transmission coefficient and tunneling current were obtained and the effect of electric field which modulates the barrier profile therefore conductivity pattern were explained. Furthermore, this method can also be applied to investigate transport properties of …
Oxygen And Silver-Oxygen Defects In Ge2se3 Electrochemical Metallization Bridge Memristors, Jau-Tzuoo Chen
Oxygen And Silver-Oxygen Defects In Ge2se3 Electrochemical Metallization Bridge Memristors, Jau-Tzuoo Chen
Electrical and Computer Engineering ETDs
We present density functional theory (DFT) calculations of oxygen and silver defects in a crystalline model of amorphous Ge2Se3. We studied defects arising from atomic oxygen and dioxygen, as well as interstitial silver and silver displacing germanium, following Campbell's conjecture on the mechanism of dendrite formation. For oxygen defect concentrations below 2%, we show that O2 dissociates in Ge2Se3, oxygen atoms are immobile, and oxygen atoms do not cluster. Within this model, the most preferred oxygen defect in intrinsic Ge2Se3 is Ge-O-Ge bridge. We conclude that oxygen defects …