Engineering Commons^™

Investigating Operational Modes In Gallium Nitride Photoconductive Switches, Brad J. Maynard

Electrical and Computer Engineering ETDs

As switching requirements for speed, power, and efficiency become more stringent, advances in wide-bandgap (WBG) materials has enabled their use in high power switching devices. One such device, the photoconductive semiconductor switch (PCSS), while previously constructed from GaAs, shows promise using WBG Mn-doped GaN. Lateral and vertical geometries of PCSS have been produced and evaluated for operation using sub-mJ/ns regime pulsed laser incidence. At fields below 25 kV/cm, the lateral switch operates in the linear regime where modest photocurrent fitting the laser envelope is observed. Above this threshold, the switches demonstrate circuit-limited persistent conductivity (PC) current, in what is presumed …