Engineering Commons^™

Oxygen And Silver-Oxygen Defects In Ge2se3 Electrochemical Metallization Bridge Memristors, Jau-Tzuoo Chen

Electrical and Computer Engineering ETDs

We present density functional theory (DFT) calculations of oxygen and silver defects in a crystalline model of amorphous Ge₂Se₃. We studied defects arising from atomic oxygen and dioxygen, as well as interstitial silver and silver displacing germanium, following Campbell's conjecture on the mechanism of dendrite formation. For oxygen defect concentrations below 2%, we show that O₂ dissociates in Ge₂Se₃, oxygen atoms are immobile, and oxygen atoms do not cluster. Within this model, the most preferred oxygen defect in intrinsic Ge₂Se₃ is Ge-O-Ge bridge. We conclude that oxygen defects …