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Ellipsometric Characterization Of Silicon And Carbon Junctions For Advanced Electronics, Alexander G. Boosalis
Ellipsometric Characterization Of Silicon And Carbon Junctions For Advanced Electronics, Alexander G. Boosalis
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
Ellipsometry has long been a valuable technique for the optical characterization of layered systems and thin films. While simple systems like epitaxial silicon dioxide are easily characterized, complex systems of silicon and carbon junctions have proven difficult to analyze. Traditional model dielectric functions for layered silicon homojunctions, a system with a similar structure to modern transistors, often have correlated parameters during ellipsometric data analysis. Similarly, epitaxial graphene as grown from thermal sublimation of silicon from silicon carbide or through chemical vapor deposition, tend to have model dielectric function parameters that correlate with the optical thickness of the graphene due to …
Tunable Absorption Based On Plasmonic Nanostructures Loaded With Graphene, Christos Argyropoulos
Tunable Absorption Based On Plasmonic Nanostructures Loaded With Graphene, Christos Argyropoulos
Department of Electrical and Computer Engineering: Faculty Publications
We present simulations of a hybrid graphene-plasmonic device constituted by periodic metallic nanowires placed over a dielectric spacer layer and a metallic film. The spacer layer is composed of a thin silica layer combined with an one-atom-thick graphene sheet. An electrically controlled ultra-compact absorption modulator can be realized based on the proposed theoretical device.