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Morphology Of Ingaas Multilayer Nanostructure On Gaas High-Index Surfaces, Yanze Xie
Morphology Of Ingaas Multilayer Nanostructure On Gaas High-Index Surfaces, Yanze Xie
Graduate Theses and Dissertations
This work aimed to explore nanostructure configuration by growing multiple layers of strained InGaAs on GaAs high index surface. The knowledge learned would help to achieve a comprehensive picture of strain-driven nanostructure evolution. Ordered arrays of InGaAs quantum dots were demonstrated on GaAs(311)B. The ordering patterns depended on the thickness of GaAs interlayer between InGaAs Quantum Dots (QDs). With an increased interfacial thickness, a transition from two dimensional (2D) lateral ordering to 1D dot chains was observed. InGaAs growth on GaAs(311)A and GaAs(331)A ended up with 1D quantum wires (QWRs). Straight InGaAs QWRs were uniformly distributed across the surfaces owing …