Engineering Commons^™

Sigesn Light-Emitting Devices: From Optical To Electrical Injection, Yiyin Zhou

Graduate Theses and Dissertations

Si photonics is a fast-developing technology that impacts many applications such as data centers, 5G, Lidar, and biological/chemical sensing. One of the merits of Si photonics is to integrate electronic and photonic components on a single chip to form a complex functional system that features compact, low-cost, high-performance, and reliability. Among all building blocks, the monolithic integration of lasers on Si encountered substantial challenges. Si and Ge, conventional epitaxial material on Si, are incompetent for light emission due to the indirect bandgap. The current solution compromises the hybrid integration of III-V lasers, which requires growing on separate smaller size substrates …

Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari

Graduate Theses and Dissertations

Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic industry due to their electrical and optical properties. The tunable band gap that can span the solar spectrum was one of the most significant features that attracted researchers’ attention. The band gap can be varied continuously from 0.77 eV for InN to 3.42 eV for GaN, covering the solar spectrum from near infrared to near ultraviolet. Additionally, it has a high absorption coefficient on the order of ∼105 cm−1, a direct band gap, high radiation resistance, thermal stability, and so on. Nevertheless, the epitaxial growth of high quality …

Two-Dimensional Black Phosphorus For Terahertz Emission And Near-Field Radiative Heat Transfer, Mahmudul Hasan Doha

Graduate Theses and Dissertations

The main focus of this work is to investigate two potential optical and optoelectronic applications of black phosphorus (BP): the near-field radiative heat transfer in plasmonic heterostructures with graphene and terahertz emission from multi-layer BP photoconductive antennas. When the separation distance between graphene-black phosphorene is much smaller than or comparable to the thermal wavelength at different temperatures, a near-field radiation heat transfer breaks the Planck blackbody limit. The magnitude of the near-field radiation enhancement acutely depends on the gate voltage, doping, and vacuum gap of the graphene and BP pair. The strong near-field radiation heat transfer enhancement of the specific …

Computational Modeling Of Black Phosphorus Terahertz Photoconductive Antennas Using Comsol Multiphysics With Experimental Comparison Against A Commercial Lt-Gaas Emitter, Jose Isaac Santos Batista

Graduate Theses and Dissertations

This thesis presents computational models of terahertz (THz) photoconductive antenna (PCA) emitter using COMSOL Multiphysics commercial package. A comparison of the computer simulated radiated THz signal against that of an experimentally measured signal of commercial reference LT-GaAs emitter is presented. The two-dimensional model (2D) aimed at calculating the photoconductivity of a black phosphorus (BP) PCA at two laser wavelengths of 780 nm and 1560 nm. The 2D model was applied to the BP PCA emitter and the LT-GaAs devices to compare their simulated performance in terms of the photocurrent and radiated THz signal pulse. The results showed better performance of …

Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique

Graduate Theses and Dissertations

In this thesis, photodetector based on the zinc oxide and cesium lead bromide hetero structure were fabricated and characterized. Zinc oxide (ZnO) nanoparticles were synthesized using solution processing and cesium lead bromide (CsPbBr3) thin film was synthesized using two step deposition method. Three phonon modes were obtained by the Raman spectroscopy of ZnO nanoparticles. X-ray diffraction spectra of ZnO exhibits five exciton peaks which denotes that the synthesized ZnO structure was of good crystallinity with wurtzite hexagonal phase. The absorbance spectrum of ZnO shows the bandgap (Eg) in the order of 3.5 eV that aligns with reported results. The photoluminescence …

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …

Design, Fabrication, And Characterization Of Novel Optoelectronic Devices For Near-Infrared Detection, Ahmad Nusir

Graduate Theses and Dissertations

Investigating semiconductor materials and devices at the nanoscale has become crucial in order to maintain the exponential development in today’s technology. There is a critical need for making devices lower in power consumption and smaller in size. Nanoscale semiconductor materials provide a powerful platform for optoelectronic device engineers. They own interesting properties which include enhanced photoconductivity and size-tunable interband transitions.

In this research, different types of nanostructures were investigated for optoelectronic devices: nanocrystals, nanowires, and thin-films. First, lead selenide nanocrystals with narrow bandgap were synthesized, size-tailored, and functionalized with molecular ligands for the application of uncooled near-infrared photodetectors. The devices …

Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan

Graduate Theses and Dissertations

Quantum dot light emitting diodes are investigated as a replacement to the existing organic light emitting diodes that are commonly used for thin film lighting and display applications. In this, all-inorganic quantum dot light emitting diodes with inorganic quantum dot emissive layer and inorganic charge transport layers are designed, fabricated, and characterized. Inorganic materials are more environmentally stable and can handle higher current densities than organic materials. The device consists of CdSe/ZnS alloyed core/shell quantum dots as the emissive layer and metal oxide charge transport layer. The charge transport in these devices is found to occur through resonant energy transfer …

Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi

Graduate Theses and Dissertations

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. …

Si-Based Germanium-Tin (Gesn) Emitters For Short-Wave Infrared Optoelectronics, Seyed Amir Ghetmiri

Graduate Theses and Dissertations

Conventional integrated electronics have reached a physical limit, and their efficiency has been influenced by the generated heat in the high-density electronic packages. Integrated photonic circuits based on the highly developed Si complementary-metal-oxide-semiconductor (CMOS) infrastructure was proposed as a viable solution; however, Si-based emitters are the most challenging component for the monolithic integrated photonic circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits.

The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable material that theoretically exhibits a direct bandgap …

Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford

Graduate Theses and Dissertations

Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide frequency bandwidth (0.1-4 THz) as well as the straightforward recovery of both the magnitude and phase of the transmitted and/or reflected signals. The achieved output THz power is low, approximately a few microwatts. This is due to the poor conversion of the femtosecond laser used as the optical pump to useable current inside the antenna semiconducting material. The majority of THz power comes from the photocarriers generated within ~ 100 nm distance from the antenna electrodes. …

Synthesis, Characterization, And Fabrication Of All Inorganic Quantum Dot Leds, Haider Baqer Salman

Graduate Theses and Dissertations

Quantum Dot LEDs with all inorganic materials are investigated in this thesis. The research was motivated by the potential disruptive technology of core shell quantum dots in lighting and display applications. These devices consisted of three main layers: hole transport layer (HTL), electron transport layer (ETL), and emissive layer where the emission of photons occurs. The latter part was formed of CdSe / ZnS core-shell quantum dots, which were synthesized following hot injection method. The ETL and the HTL were formed of zinc oxide nanocrystals and nickel oxide, respectively. Motivated by the low cost synthesis and deposition, NiO and ZnO …

Growth Of Gesn And Gepb Alloy Films Using Thermal Evaporator, Hakimah Alahmed

Graduate Theses and Dissertations

Silicon is the most important semiconductor material used in microelectronic devices. As the number of transistors keep doubling every 24 months (Moore’s law), transistors continue scaling down in size, electrical interconnect is reaching its limits to keep up with the scaling down rate in integrated circuits. These limitations are related to interconnect density and power consumption. Hence, replacing electrical interconnect with optical interconnect on the chip or between chips has the ability to overcome these limitations. However, silicon has poor light emitting efficiency, and other substitutes such as III-V materials are not suitable due to high cost, lattice mismatch, and …

Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh

Graduate Theses and Dissertations

Microelectronics industry has experienced a tremendous change over the last few decades and has shown that Moore’s law has been followed by doubling the number of transistors on the chip every 18 months. However, continuous scaling down of the transistors size is reaching the physical limits and data transfer through metal interconnects will not be able to catch up with the increasing data processing speed in the future. Therefore, optical data transfer between chips and on-chip has been widely investigated. Silicon based optoelectronics has received phenomenal attention since Si has been the core material on which microelectronic industry has been …

Gesn Devices For Short-Wave Infrared Optoelectronics, Benjamin Ryan Conley

Graduate Theses and Dissertations

The electronics industry has a large silicon infrastructure for the manufacture of complementary-metal oxide semiconductor (CMOS) based electronics. The increasing density of Si based circuits has set a pace that is now pushing the physical limits of connectivity between devices over conventional wire based links. This has driven the increasing interest in Si based optoelectronics and to use the groundwork already established by the electronics industry for lower cost optical communications. The greatest limitation to this effort has been the incorporation of a Si based laser, which requires integration of a direct bandgap material within this CMOS process.

The Ge1-xSnx …

Synthesis And Characterization Of Nanocrystals And Their Application For Photodetectors, Ahmad Nusir

Graduate Theses and Dissertations

Room temperature operation is considered one of the essential restrictions in the design of electronic devices. Photodetectors are unable to detect light efficiently at room temperature due to high dark currents. Semiconductor nanocrystals possess unique optical and electrical properties which make them ideal for fabricating uncooled photodetectors. In this project, nanocrystals were synthesized and implemented in devices that detect light at room temperature.

Nanocrystalline I-III-VI2 and II-VI semiconductors (CuInS2 and CdSe) were grown by a wet chemical method, and characterized using: optical absorption, photoluminescence, Raman scattering, and x-ray diffraction. The optical absorption and photoluminescence spectra of the nanocrystals were recorded …

Gesn Devices For Short-Wave Infrared Optoelectronics, Benjamin Ryan Conley

Graduate Theses and Dissertations

The electronics industry has a large silicon infrastructure for the manufacture of complementary-metal oxide semiconductor (CMOS) based electronics. The increasing density of Si based circuits has set a pace that is now pushing the physical limits of connectivity between devices over conventional wire based links. This has driven the increasing interest in Si based optoelectronics and to use the groundwork already established by the electronics industry for lower cost optical communications. The greatest limitation to this effort has been the incorporation of a Si based laser, which requires integration of a direct bandgap material within this CMOS process.

The Ge1-xSnx …