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Solution-Processed Ultrasensitive Polymer Photodetectors With High External Quantum Efficiency And Detectivity, Xilan Liu, Hangxing Wang, Tingbin Yang, Wei Zhang, Xiong Gong
Solution-Processed Ultrasensitive Polymer Photodetectors With High External Quantum Efficiency And Detectivity, Xilan Liu, Hangxing Wang, Tingbin Yang, Wei Zhang, Xiong Gong
Xiong Gong
Operating at room temperature, polymer photodetectors (PDs) with external quantum efficiency approximately 80%, detectivity over 1013 Jones, linear dynamic range over 120 dB, and dark current a few decades of nA/cm2 were demonstrated. All these performance parameters were achieved by combined treatment of active layer with solvent vapor annealing and of polymer PDs with postproduction thermal annealing. These high performance parameters demonstrated that polymer PDs is comparable to or better than inorganic counterparts.
On The Nature Of Shunt Leakage In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Y, Dapeng Wang, Michel Frei, Souvik Mahapatra, Muhammad Alam
On The Nature Of Shunt Leakage In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Y, Dapeng Wang, Michel Frei, Souvik Mahapatra, Muhammad Alam
Sourabh Dongaonkar
In this letter, we investigate the nature of shunt leakage currents in large-area (on the order of square centimeters) thin-film a-Si:H p-i-n solar cells and show that it is characterized by following universal features: 1) voltage symmetry; 2) power-law voltage dependence; and 3) weak temperature dependence. The voltage symmetry offers a robust empirical method to isolate the diode current from measured “shunt-contaminated” forward dark IV . We find that space-charge-limited current provides the best qualitative explanation for the observed features of the shunt current. Finally, we discuss the possible physical origin of localized shunt paths in the light of experimental …