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Microwave Dielectric Properties Of Epitaxial Mn-Doped Ba(Zr,Ti)O-3 Thin Films On Laalo3 Substrates, Ming Liu, Chunrui Ma, Jian Liu, Gregory Collins, Chonglin Chen, Andy Alemayehu, Guru Subramanyam, Chao Dai, Yuan Lin, Amar Bhalla
Microwave Dielectric Properties Of Epitaxial Mn-Doped Ba(Zr,Ti)O-3 Thin Films On Laalo3 Substrates, Ming Liu, Chunrui Ma, Jian Liu, Gregory Collins, Chonglin Chen, Andy Alemayehu, Guru Subramanyam, Chao Dai, Yuan Lin, Amar Bhalla
Guru Subramanyam
Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti0.8)O3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from x-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:BZT//[100]LAO and (001)Mn:BZT //(001)LAO. The microwave dielectric property measurements (13–17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti0.8)O3 thin films can be used for the …