Engineering Commons^™

Solution-Processed Near-Infrared Polymer Photodetectors With An Inverted Device Structure, Xilan Liu, Hangxing Wang, Tingbin Yang, Wei Zhang, I-Fan Hsieh, Stephen Cheng, Xiong Gong

Xiong Gong

Solution-processed near-infrared polymer photodetectors with an inverted device structure were designed and fabricated. By introducing ZnOx and MoO3 as an electron extraction layer and a hole extraction layer, respectively, the asymmetric characteristics of the inverted polymer photodetectors was constructed. Operating at room temperature, the inverted polymer photodetectors exhibited the detectivity over 1012 cm Hz1/2/W from 400 to 850 nm, resulting from the enhanced photocurrent and reduced dark current induced by fabricating photoactive layer from solution with processing additive 1,8-diiodooctane. These device performances were comparable to those of inorganic counterparts.