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Full-Text Articles in Engineering
Strained Si On Insulator Technology: From Materials To Devices, T. Langdo, M. Currie, Z.-Y. Cheng, J. Fiorenza, M. Erdtmann, G. Braithwaite, C. Leitz, C. Vineis, J. Carlin, A. Lochtefeld, M. Bulsara, Isaac Lauer, Dimitri Antoniadis, Mark Somerville
Strained Si On Insulator Technology: From Materials To Devices, T. Langdo, M. Currie, Z.-Y. Cheng, J. Fiorenza, M. Erdtmann, G. Braithwaite, C. Leitz, C. Vineis, J. Carlin, A. Lochtefeld, M. Bulsara, Isaac Lauer, Dimitri Antoniadis, Mark Somerville
Mark Somerville
SiGe-free strained Si on insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced capacitance and improved scalability of thin film silicon on insulator (SOI). We demonstrate fabrication of 20% Ge equivalent strain level SSOI substrates with Si thicknesses of 100 and 400 Å by hydrogen-induced layer transfer of strained Si layers from high quality graded SiGe virtual substrates. The substrate properties are excellent: wafer scale strained Si film thickness uniformities are better than 8%, strained Si surface roughnesses are better than 0.5 nm RMS, and robust tensile strain levels are …
Fully Depleted N-Mosfets On Supercritical Thickness Strained Soi, Isaac Lauer, T. Langdo, Z.-Y. Cheng, J. Fiorenza, G. Braithwaite, M. Currie, C. Leitz, A. Lochtefeld, H. Badawi, M. Bulsara, Mark Somerville, Dimitri Antoniadis
Fully Depleted N-Mosfets On Supercritical Thickness Strained Soi, Isaac Lauer, T. Langdo, Z.-Y. Cheng, J. Fiorenza, G. Braithwaite, M. Currie, C. Leitz, A. Lochtefeld, H. Badawi, M. Bulsara, Mark Somerville, Dimitri Antoniadis
Mark Somerville
Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic capacitance and improved MOSFET scalability of thin-film SOI. We demonstrate fabrication of highly uniform SiGe-free SSOI wafers with 20% Ge equivalent strain and report fully depleted n-MOSFET results. We show that enhanced mobility is maintained in strained Si films transferred directly to SiO2 from relaxed Si0.8Ge0.2 virtual substrates, even after a generous MOSFET fabrication thermal budget. Further, we find the usable strained-Si thickness of SSOI significantly exceeds the critical thickness of strained Si/SiGe without deleterious leakage current effects typically …