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Full-Text Articles in Engineering
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan
Yung Joon Jung
High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.
Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer
Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer
Yung Joon Jung
The authors demonstrate precise alignment and controlled assembly of single wall nanotube (SWNT) bundles at a fast rate over large areas by combining electrophoresis and dip coating processes. SWNTs in solution are assembled on prepatterned features that are 80 nm wide and separated by 200 nm. The results show that the direction of substrate withdrawal significantly affects the orientation and alignment of the assembled SWNT bundles. I-V characterization is carried out to demonstrate electrical continuity of these assembled SWNT bundles.