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Full-Text Articles in Engineering

Magnetic And Microwave Properties Of Cofe/Ptmn/Cofe Multilayer Films, C. Pettiford, A. Zeltser, S. Yoon, V. Harris, C. Vittoria, N. Sun Aug 2013

Magnetic And Microwave Properties Of Cofe/Ptmn/Cofe Multilayer Films, C. Pettiford, A. Zeltser, S. Yoon, V. Harris, C. Vittoria, N. Sun

Nian X. Sun

CoFe/PtMn/CoFe films were deposited on seed layers of Ru or NiFeCr with CoFe film compositions being either Co-10 at. %Fe or Co-16 at. %Fe. Eight periods of the CoFe/PtMn/CoFe trilayers were also prepared. The magnetic properties and ferromagnetic resonance (FMR) of these films were characterized with vibrating-sample magnetometer, and field-sweep FMR system at X band (∽9.5 GHz). The Ru-seeded CoFe/PtMn/CoFe sandwich films show excellent magnetic softness with a low hard axis coercivity of 2-4 Oe, an easy axis Mr/Ms of >98%, and a significantly enhanced in-plane anisotropy of 57-123 Oe when CoFe layer thickness is above 200 …


Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris Aug 2013

Room Temperature Magnetism In Semiconducting Films Of Zno Doped With Ferric Ions, S. D. Yoon, Y. J. Chen, D. Heiman, A. Yang, N. Sun, C. Vittoria, V. G. Harris

Nian X. Sun

Films consisting of Zn₁₋ₓFeₓO were prepared by alternating-target laser ablation deposition. The Fe doping levels ranged from x=0.016 to 0.125 at. %. X-ray diffraction and energy dispersive x-ray spectroscopy measurements showed only (002n) reflections of the ZnO host and confirmation of the Fe concentration, respectively. For films grown on (001) Al₂O₃ at 300 K, room temperature average saturation magnetization, < 4πMs >, measured from superconducting quantum interference device (SQUID) hysteresis loops for x=0.125 ± 0.025 was 172 G. Although SQUID measurements were sensitive to the average value of the saturation magnetization, ferrimagnetic resonance measurements appeared to be sensitive only to the saturation …


Single Crystal Fe Films Grown On Ge(001) Substrates By Magnetron Sputtering, J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, N. X. Sun Aug 2013

Single Crystal Fe Films Grown On Ge(001) Substrates By Magnetron Sputtering, J. Lou, A. Daigle, L. Chen, Y. Q. Wu, V. G. Harris, C. Vittoria, N. X. Sun

Nian X. Sun

Single crystal Fe films were grown on Ge (001) substrates by using dc magnetron sputtering. It was found that the microstructures and magnetic properties of Fe films on Ge substrates were strongly dependent upon the substrate temperature during the deposition process. There existed a narrow substrate temperature window of 125 ± 25°C for achieving single crystal Fe film on Ge. Lower substrate temperature led to polycrystalline Fe films due to limited mobility of Fe atoms, while higher substrate temperatures resulted in amorphous Fe-Ge alloy due to severe interdiffusion.


Structure And Magnetism Of Nanocrystalline Exchange-Coupled (Ni₀.₆₇Co₀.₂₅Fe₀.₀₈)₈₉₋ₓzr₇B₄Cuₓ (X=0,1) Films, S. Joshi, S. D. Yoon, A. Yang, N. X. Sun, C. Vittoria, V. G. Harris, R. Goswami, M. Willard, N. Shi Aug 2013

Structure And Magnetism Of Nanocrystalline Exchange-Coupled (Ni₀.₆₇Co₀.₂₅Fe₀.₀₈)₈₉₋ₓzr₇B₄Cuₓ (X=0,1) Films, S. Joshi, S. D. Yoon, A. Yang, N. X. Sun, C. Vittoria, V. G. Harris, R. Goswami, M. Willard, N. Shi

Nian X. Sun

Structural and magnetic characterizations of nanocrystalline films of (Ni₀.₆₇Co₀.₂₅Fe₀.₀₈)₈₉₋ₓZr₇B₄Cuₓ (x=0,1) alloys are reported. The films were grown on quartz substrates using pulsed laser deposition from homogeneous targets of the above compositions at substrate temperatures ranging from ambient to 600°C. Structural properties were measured by x-ray diffraction, atomic force microscopy, and transmission electron microscopy, whereas the magnetic properties were measured by vibrating sample magnetometry and ferromagnetic resonance. The resulting films exist as a two phase alloy with face-centered-cubic metallic grains suspended in an amorphous matrix. For both the x=1 and x=0 alloys, the softest magnetic properties (coercivity Hc < 0.5 Oe, 4πMs …


A Quantitative Model For The Nonlinear Response Of Fluxgate Magnetometers, A. L. Geiler, V. G. Harris, C. Vittoria, N. X. Sun Aug 2013

A Quantitative Model For The Nonlinear Response Of Fluxgate Magnetometers, A. L. Geiler, V. G. Harris, C. Vittoria, N. X. Sun

Nian X. Sun

An analytical nonlinear hysteresis model was developed to describe the hysteresis loops of different magnetic materials, which was capable of fitting Permalloy films as an example. As a case study this model was applied in the sensitivity analysis of the fluxgate magnetometers where accurately capturing the nonlinear behavior of the magnetic core is crucial. Straightforward analytical equation of the output voltage signal as well as its harmonic decomposition was obtained for the fluxgate magnetometer as a function of hysteresis loop parameters. Sensitivity values predicted by the model were found to be consistent with the measured values published previously. The model …


Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris Aug 2013

Microwave Tunability In A Gaas-Based Multiferroic Heterostructure: Co₂Mnal/Gaas/Pmn-Pt, Y. Chen, J. Gao, M. Liu, S. D. Yoon, A. L. Geiler, M. Nedoroscik, D. Heiman, N. X. Sun, C. Vittoria, V. G. Harris

Nian X. Sun

A strong magnetoelectric (ME) interaction is presented in a magnetostrictive-semiconductor-piezoelectric heterostructure that consists of the Huesler alloy, Co₂MnAl, GaAs, and lead magnesium niobate-lead titanate (PMN-PT). The laminated Co₂MnAl/GaAs/PMN-PT structure, having a thickness of 19 nm/180 μm/500 μm, demonstrates a ferromagnetic resonance (FMR) field shift of 28 Oe with an external electric field of 200 V across the PMN-PT substrate. This corresponds to a resonance frequency shift of similar to 125 MHz at X-band. It yields a large ME coupling (7 Oe cm/kV) and microwave tunability (similar to 32 MHz/kV cm⁻¹), compared to other trilayer multiferroic composite structures. In addition, static …


Microwave, Magnetic, And Structural Properties Of Nanocrystalline Exchange-Coupled Ni₁₁Co₁₁Fe₆₆Zr₇B₄Cu₁ Films For High Frequency Applications, S. D. Yoon, A. K. Baraskar, A. Geiler, A. Yang, C. Pettiford, N. X. Sun, R. Goswami, M. A. Willard, C. Vittoria, V. G. Harris Aug 2013

Microwave, Magnetic, And Structural Properties Of Nanocrystalline Exchange-Coupled Ni₁₁Co₁₁Fe₆₆Zr₇B₄Cu₁ Films For High Frequency Applications, S. D. Yoon, A. K. Baraskar, A. Geiler, A. Yang, C. Pettiford, N. X. Sun, R. Goswami, M. A. Willard, C. Vittoria, V. G. Harris

Nian X. Sun

Nanocrystalline structured films of the alloy Ni₁₁Co₁₁Fe₆₆Zr₇B₄Cu₁ were deposited by pulsed laser ablation deposition onto fused quartz substrates. A substrate temperature of 300°C was found to produce films consisting of body-centered-cubic (bcc) metallic grains suspended in an amorphous matrix. The bcc grain size ranged from 5 - 8 nm for substrate temperatures up to 300°C. Measured values of coercivity were consistently below 4 Oe for films having a saturation magnetization, as 4π Ms, of ∽16 kG with in- plane uniaxial anisotropy fields of 25 to 30 Oe. The ferromagnetic resonance peak- to- peak derivative linewidth was measured to be 34 …


Voltage Impulse Induced Bistable Magnetization Switching In Multiferroic Heterostructures, T. X. Nan, Z. Y. Zhou, J. Lou, M. Liu, X. Yang, Y. Gao, S. Rand, N. X. Sun Aug 2013

Voltage Impulse Induced Bistable Magnetization Switching In Multiferroic Heterostructures, T. X. Nan, Z. Y. Zhou, J. Lou, M. Liu, X. Yang, Y. Gao, S. Rand, N. X. Sun

Nian X. Sun

We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage.


Equivalence Of Direct And Converse Magnetoelectric Coefficients In Strain-Coupled Two-Phase Systems, Jing Lou, Gerry N. Pellegrini, Ming Liu, Neil D. Mathur, Nian X. Sun Aug 2013

Equivalence Of Direct And Converse Magnetoelectric Coefficients In Strain-Coupled Two-Phase Systems, Jing Lou, Gerry N. Pellegrini, Ming Liu, Neil D. Mathur, Nian X. Sun

Nian X. Sun

We demonstrate an equivalence between direct and converse magnetoelectric effects in two-phase systems comprising piezoelectric and magnetostrictive materials. This was achieved by recasting the Maxwell relation in terms of the effective electrical and magnetic dipole moments for the system and comparing coupling strengths at the same electrical and magnetic d.c. biases. Our findings therefore apply to magnetoelectric systems comprising more than two phases and correct the two widely held but opposing views that are compromised by incorrect parameterization or inconsistent bias conditions.


Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi Aug 2013

Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi

Nian X. Sun

This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.