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Articles 1 - 15 of 15
Full-Text Articles in Engineering
Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.
Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.
David V. Kerns
Reported is a novel vacuum field emission transistor (VFET) differential amplifier (diff-amp) utilising nanocrystalline diamond emitters with self-aligned gate partitions. The integrated VFET diff-amp was fabricated by a dual-mask self-aligned mould transfer method in conjunction with chemical vapour deposited nanodiamond. Identical pairs of devices with well-matched field emission transistor characteristics were obtained, realising a negligible common-mode gain, high differential-mode gain, and large common-mode rejection ratio (CMRR) of 55 dB. The emission current was validated by a modified Fowler-Nordheim equation in transistor configuration, and the CMRR was modelled by an equivalent half-circuit with the calculated result found to agree well with …
Measurement Of Metal Migration On Thick Film Piezoresistors And Their Termination, David V. Kerns, C Song, J L. Davidson, D L. Kinser
Measurement Of Metal Migration On Thick Film Piezoresistors And Their Termination, David V. Kerns, C Song, J L. Davidson, D L. Kinser
David V. Kerns
Metal migration from the thick-film termination can affect not only the electrical characteristics but also the gauge factor or piezoresistive coefficient of thick-film sensors. Four sets of sensors with different ratios were designed to test the influence of the terminal metal migration effects on the gauge factors and resistivity of thick-film resistors. In all the cases, the shortest resistors have a lower gauge factor and a large deviation ofresistances. The longer resistors will have better electrical parameters. SEM (scanning electron microscope) studies showed this interaction at the interface between the terminal and the resistor. The same distance of terminal diffusion …
A Polycrystalline Diamond Thin Film Based Hydrogen Sensor, David Kerns, W Kang, Y Gurbuz, J Davidson
A Polycrystalline Diamond Thin Film Based Hydrogen Sensor, David Kerns, W Kang, Y Gurbuz, J Davidson
David V. Kerns
A new microelectronic gas sensor utilizing polycrystallinediamondfilm in conjunction with a catalytic metal has been developed for hydrogen detection. The sensor is fabricated in a layered Pd/i-diamond/p-diamond metal-insulator-semiconductor (MIS) Schottky-diode configuration on a tungsten substrate. The performance of the sensor for H2 detection has been examined in the temperature range 27-300°C. The analysis of the steady-state reaction kinetics has confirmed that the hydrogen adsorption process is responsible for the barrier-height change in the diamond-based MIS Schottky diode. The use ofdiamond-film technology opens the door to the development of a microelectronic gas sensor that can operate at a wider and …
A New Hydrogen Sensor Using A Polycrystalline Diamond-Based Schottky Diode, David Kerns, W Kang, Y Gurbuz, J Davidson
A New Hydrogen Sensor Using A Polycrystalline Diamond-Based Schottky Diode, David Kerns, W Kang, Y Gurbuz, J Davidson
David V. Kerns
Anew hydrogen sensor utilizing plasma-enhanced chemical vapor deposited diamond inconjunction with palladium(Pd) metal has been developed. The device isfabricated in a layered Pd/undoped diamond/p-doped diamond Schottkydiode configuration. Hydrogensensing characteristics of the device have been examined in termsof sensitivity, linearity,response rate, and response time as a functionof temperature and hydrogen partial pressure. Hydrogen adsorption activation energyis investigated in the temperature range from 27 to 85°C.Analysis of the steady-state reaction kinetics usingthe I-V method confirmthat the hydrogen adsorption process is responsible for the barrierheight change in the diamondSchottky diode. The ability to fabricatediamond-based hydrogen sensor on a variety of substrates makes thedevice …
Analyses Of Electroluminescence Spectra Of Silicon Junctions In Avalanche Breakdown Using An Indirect Interband Recombination Model, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Analyses Of Electroluminescence Spectra Of Silicon Junctions In Avalanche Breakdown Using An Indirect Interband Recombination Model, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
David V. Kerns
Light emission from a p-n junction biased in avalanche breakdown has been modeled over the range 1.4–3.4 eV. The model emphasizes indirect interband processes and Si self-absorption. Comparisons between measured and simulated spectra for sample junctions from multiple devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device characteristics.
Comparison Of Contactless Measurement And Testing Techniques To A New All-Silicon Optical Test And Characterization Method, Sherra Kerns, David Kerns, Selahattin Sayil
Comparison Of Contactless Measurement And Testing Techniques To A New All-Silicon Optical Test And Characterization Method, Sherra Kerns, David Kerns, Selahattin Sayil
David V. Kerns
The rapid improvement in performance and increased density of electronic devices in integrated circuits has provided a strong motivation for the development of contactless testing and diagnostic measurement methods. This paper first reviews existing contactless test methodologies and then compares these with an all-silicon contactless testing approach that has been recently developed and demonstrated. This cost-effective approach utilizes silicon-generated optical signals and has the advantages of easy test setup, low equipment cost, and noninvasiveness over existing contactless test and measurement methods.
A Novel Wide-Band-Gap Semiconductor Based Microelectronic Gas Sensor, David V. Kerns, W P. Kang, J L. Davidson, B Henderson, Y Gurbuz
A Novel Wide-Band-Gap Semiconductor Based Microelectronic Gas Sensor, David V. Kerns, W P. Kang, J L. Davidson, B Henderson, Y Gurbuz
David V. Kerns
Summary form only given. A wide-band-gap semiconductor, high temperature tolerant microelectronic gas sensor of diamond has been developed for oxygen, hydrogen and CO gas detection. This new device has been fabricated in the form of catalyst-adsorptive oxide(Pt-SnOx )/i(intrinsic)-diamond/p+(doped)diamond, representing a CAIS device structure. The key elements in this structure are SnOx as a gas sensitive layer and PECVD (plasma enhanced chemical vapor deposited) diamond for high temperature operations. The major advantages of using diamond based structures with SnOx for gas sensing are higher operating temperature range, higher gas sensitivity and selectivity, reliable sensing performance in harsh environments, simplicity in fabrication …
A Novel Oxygen Gas Sensor Utilizing Thin Film Diamond Diode With Catalyzed Tin Oxide Electrode, David Kerns, Y Gurbuz, W Kang, J Davidson
A Novel Oxygen Gas Sensor Utilizing Thin Film Diamond Diode With Catalyzed Tin Oxide Electrode, David Kerns, Y Gurbuz, W Kang, J Davidson
David V. Kerns
Anovel microelectronic device utilizing the gas sensing properties of tinoxide SnOx and electrical properties of plasma enhanced chemical vapor deposited (PECVD) diamondfilm for oxygengas sensing at higher and wide temperature range is presented in this paper. The sensor is fabricated as a layer of catalyst/SnOx(adsorptive oxide)/i(intrinsic)-diamond/p+-diamond CAIS structure. The performance of the new microelectronic gassensor has demonstrated a large sensitivity to oxygengas. The response is reproducible and repeatable. Activation energy of oxygen adsorption by the new microelectronic gassensoris low. The sensor has also indicated CO detection in air ambient.
A Study Of Diamond Field Emission Using Micro-Patterned Monolithic Diamond Tips With Different Sp2 Contents, David Kerns, A Wisitsora-At, W Kang, J Davidson
A Study Of Diamond Field Emission Using Micro-Patterned Monolithic Diamond Tips With Different Sp2 Contents, David Kerns, A Wisitsora-At, W Kang, J Davidson
David V. Kerns
Electron field emission from an array of micro-patterned monolithic diamond tips with varying sp2 content has been systematically investigated. The experimental results show that the field emission characteristics can be improved and the turn-on electric field can be reduced more than 50% by increasing sp2 content. Two hypotheses are proposed as an explanation of the effect of sp2 content on the field emission characteristics of diamond tips: the lowering of the work function due to defect-induced band generated bysp2 content in the diamond lattice and an increase in the field enhancement factor due to embedded sp2–diamond–sp2 cascaded microstructures.
The Search For Design In Electrical Engineering Education, David V. Kerns, Sherra E. Kerns, Mark Somerville, Gill Pratt, Jill Crisman
The Search For Design In Electrical Engineering Education, David V. Kerns, Sherra E. Kerns, Mark Somerville, Gill Pratt, Jill Crisman
David V. Kerns
The importance of "design" in engineering education is well established and a cornerstone of most new engineering curricula as well as accreditation criteria Electrical and computer engineering (ECE) programs view many elements of design in ways similar to other engineering disciplines. However, in some respects other disciplines within engineering, such as Mechanical Engineering (ME), view design in broader terms, and perhaps gain value that electrical and computer engineering educators may miss. This paper describes how design is typically viewed in ECE programs, bow it's viewed in other engineering areas, particularly ME, and suggests some new possibilities for enhancing design education …
Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang
Evaluation And Design Optimization Of Piezoresistive Gauge Factor Of Thick-Film Resistors, Sherra E. Kerns, David V. Kerns, C Song, J. L. Davidson, W. P. Kang
David V. Kerns
On the basis of the analysis of all the thick- film design methodologies, the authors designed a test sample on which four different length-over-width ratios of resistors were designed. They found that the length-over-width ratio will substantially affect the gauge factor in some cases, in contrast to prior research. This can be modeled to generate a linear predictive model, The sensors designed on the insulator and the sensors underneath the insulator were also studied in order to simulate the multilayer hybrid technology and study the effects of insulator-resistor-substrate surface interaction. It is demonstrated that design techniques can affect the strain …
A Novel Low-Field Electron-Emission Polycrystalline Diamond Microtip Array For Sensor Applications, David Kerns, W Kang, J Davidson, Q Li, J Xu, D Kinser
A Novel Low-Field Electron-Emission Polycrystalline Diamond Microtip Array For Sensor Applications, David Kerns, W Kang, J Davidson, Q Li, J Xu, D Kinser
David V. Kerns
Electronfieldemission from an array of patterned pyramids of polycrystalline diamond has been investigated for microsensor applications. Selective deposition and molding of a polycrystalline diamondfilm in a silicon cavity mold and subsequent creation of a freestanding polycrystalline diamond diaphragm with diamond pyramidal microtips has been achieved. The processing techniques are compatible with IC and micromachining technologies. High current emission from the patterned diamond microtip arrays is obtained at low electric fields. Field emission for these diamond microtips exhibits significant enhancement in total emission current compared to silicon emitters. Moreover, field emission from patterned polycrystalline diamond pyramidal-tip arrays is unique in that …
Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles
Single-Event Charge Enhancement In Soi Devices, David Kerns, Sherra Kerns, L Massengill, M Alles
David V. Kerns
Studies are presented of single-particle ion effects in body-tied CMOS/silicon-on-insulator (SOI) devices. It is shown that two mechanisms can contribute to SOI soft-error rates: a direct ion-induced photocurrent and a local lateral bipolar current. The total amount of charge collected is sensitive to the relative locations of the ion strike and the body-to-source tie.
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
Simulation Of Gallium Arsenide Electroluminescence Spectra In Avalanche Breakdown Using Self-Absorption And Recombination Models, David Kerns, Sherra Kerns, M Lahbabi, A Ahaitouf, E Abarkan, M Fliyou, A Hoffmann, J Charles, Bharat Bhuva
David V. Kerns
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
Analysis Of Electroluminescence Spectra Of Silicon And Gallium Arsenide P-N Junctions In Avalanche Breakdown, M Lahbabi, A Ahaitoufa, M. Fliyou, E. Abarkan, J.-P. Charles, A. Bath, A. Hoffmann, Sherra Kerns, David Kerns, Jr.
David V. Kerns
We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon (Si) and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast …