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Full-Text Articles in Engineering
The Affects Of High Temperature Steps On Bow, Warp And Slip Of A Wafer, Mark Klare
The Affects Of High Temperature Steps On Bow, Warp And Slip Of A Wafer, Mark Klare
Journal of the Microelectronic Engineering Conference
Bow, Warp and Slip measurements were used to characterize push/pull rates of a three inch oxidation furnace. The push/pull rates were varied from 3 to 30 inches per minute. To minimize the amount of bow, warp, and slip while still being time efficient, recommended push rates of 12 and pull rates of 3 in/mm should were found.
Investigation Of Locos Process Using Nitrogen Implantation, Joseph W. Walters
Investigation Of Locos Process Using Nitrogen Implantation, Joseph W. Walters
Journal of the Microelectronic Engineering Conference
A localized oxidation of silicon (LOCOS) process was investigated using nitrogen ion implantation. The doses of 2E12, 2E13, 2E14, and 1E15 atoms/cm2 were implanted through a photoresist mask using the Varian/Extrion 40-100 ion implanter. The results show the initial formation of a LOCOS oxidation. The localized image faded on extended oxidation which indicates the implanted region did not adequately inhibit the diffusion of oxygen.
Boron Solid Source Characterization, Kelly Baycura
Boron Solid Source Characterization, Kelly Baycura
Journal of the Microelectronic Engineering Conference
Standard Oil’s BN—975 planar diffusion sources were used to fabricate integrated resistors. Dopant transfer was done in a N2:02:H2 ambient at 975 C. Two methods of removing the crystal defect layer formed at the surface, low temperature oxidation (LTO) and a nitric acid soak, were evaluated. Successful layer removal was achieved with the LTO. The nitric acid soak met with limited success.