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Rochester Institute of Technology

Journal

2009

Silicon

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Photodiode Development For Fluorescence Spectroscopy Applications, Jeremy Goodman Jan 2009

Photodiode Development For Fluorescence Spectroscopy Applications, Jeremy Goodman

Journal of the Microelectronic Engineering Conference

Two photodiode architectures were designed, built, and tested for comparison for implementation into a fluorescence spectroscopy, or fluorometric, system. All devices were fabricated on 4-inch, N-type silicon substrates. The photodiodes presented were tested for responsivity and response time, two main factors judging effective incorporation in fluorometric applications. The planar photodiode excels in responsivity due to the device’s large active-area; however, high junction capacitance greatly hinders the response time. The lateral photodiode had much lower junction capacitance than the planar, but exhibited lesser responsivity due to the decreased active area size. The lateral photodiode was chosen as a candidate for timeresolved …


Low Temperature Junction Formation In Silicon, Andrew Mccable Jan 2009

Low Temperature Junction Formation In Silicon, Andrew Mccable

Journal of the Microelectronic Engineering Conference

The goal of this project was to examine the low temperature formation of silicon P-N junctions on SOl substrates. P+N and N+P diodes were fabricated with several different dopants at various implant doses. The effects of the silicon thickness were also examined. Existing theories of low temperature phosphorous solid-phase epitaxy (SPE) were verified through this study.