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Simulation Of Insb Devices Using Drift-Diffusion Equations, Edin Sijercic

Dissertations and Theses

Silicon technology has for several decades followed Moore's law. Reduction of feature dimensions has resulted in constant increase in device density which has enabled increased functionality. Simultaneously, performance, such as circuit speed, has been improving. Recently, this trend is in jeopardy due to, for example, unsustainable increase in the processor power dissipation. In order to continue development trends, as outlined in ITRS roadmap, new approaches seem to be required once feature size reaches 10 - 20 nm range.

This research focuses on using 111-V compounds, specifically indiumantimonide (lnSb), to supplement silicon CMOS technology. Due to its low bandgap and high …