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Finite Element Analysis Of Thermal Stresses In Semiconductor Devices, Joachim Karl Wilhelm Duerr

Dissertations and Theses

The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion.

This research covers the thermal stresses introduced upon cooling a composite Silicon device. A transient thermal analysis has been performed to determine the temperature gradients. The stress distribution has been investigated. For …