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Deposition And Characterization Of Indium Nitride And Aluminum Nitride Thin Films By Reactive Sputtering, Sushma Swaraj Atluri
Deposition And Characterization Of Indium Nitride And Aluminum Nitride Thin Films By Reactive Sputtering, Sushma Swaraj Atluri
Electrical & Computer Engineering Theses & Dissertations
Intensive research has been carried out on III-V semiconductors for over a century due to their various applications in the field of Microelectronics, Optics, and Photonics. Among III-V materials, the III-nitrides, for example Aluminum Nitride, Indium Nitride, Gallium Nitride and their ternary alloys are known for their unique properties. All the III-Nitride Compounds are direct bandgap semiconductors with a bandgap ranging from 0.7 eV to 6.2 eV covering the entire visible region and extending to the UV region as well. Despite having many applications, fabricating good quality thin films without defects is quite a challenge. They are typically grown using …