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Full-Text Articles in Engineering
Effect Of Layer Thickness On Structural, Morphological And Superconducting Properties Of Nb3Sn Films Fabricated By Multilayer Sequential Sputtering, M. N. Sayeed, U. Pudasaini, C. E. Reece, G. V. Eremeev, H. E. Elsayed-Ali
Effect Of Layer Thickness On Structural, Morphological And Superconducting Properties Of Nb3Sn Films Fabricated By Multilayer Sequential Sputtering, M. N. Sayeed, U. Pudasaini, C. E. Reece, G. V. Eremeev, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Superconducting Nb3Sn films can be synthesized by controlling the atomic concentration of Sn. Multilayer sequential sputtering of Nb and Sn thin films followed by high temperature annealing is considered as a method to fabricate Nb3Sn films, where the Sn composition of the deposited films can be controlled by the thickness of alternating Nb and Sn layers. We report on the structural, morphological and superconducting properties of Nb3Sn films fabricated by multilayer sequential sputtering of Nb and Sn films on sapphire substrates followed by annealing at 950 °C for 3 h. We have investigated the …
Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem
Optical Properties Of Wide Band Gap Indium Sulphide Thin Films Obtained By Physical Vapor Deposition, N. Barreau, S. Marsillac, J. C. Bernède, T. Ben Nasrallah, S. Belgacem
Electrical & Computer Engineering Faculty Publications
Thin films of indium sulphide containing oxygen have been synthesized following a dry physical process. The constituents are deposited by thermal evaporation on glass substrates and then annealed under argon flow. Polycrystalline β-In2S3 containing oxygen thin films are obtained as soon as the temperature of annealing is between 623 and 723 K. In this paper, these β-In2S3 thin films have optically been studied. The optical band gap is direct. Its value is not dependent on the temperature of annealing. It is about 2.8 eV, which is higher than that of β-In2S3 …
New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil
New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil
Electrical & Computer Engineering Faculty Publications
After deposition, by evaporation under vacuum, of Al/Cu/Te, multilayer structures, annealing at 673 K or more for half an hour, under argon flow, allows CuAlTe2 films crystallized in the chalcopyrite structure to be obtained. The optical and electrical properties are interpreted by introducing the influence of impurity foreign phases present in the films. The optical properties are sensitive to the small Al2O3 domains randomly distributed into the CuAlTe2 polycrystalline matrix. The optical band gap is slightly increased (2.35 eV) by the presence of alumina. The conductivity measurements show that a short circuit effect can be induced by a binary Cu2-xTe …
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali
Electrical & Computer Engineering Faculty Publications
CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …
Strains In Si-Onsio2 Structures Formed By Oxygen Implantation: Raman Scattering Characterization, D.J. Olego, H. Baumgart, G.K. Celler
Strains In Si-Onsio2 Structures Formed By Oxygen Implantation: Raman Scattering Characterization, D.J. Olego, H. Baumgart, G.K. Celler
Electrical & Computer Engineering Faculty Publications
Low-temperature Raman scattering measurements were carried out to characterize Si-on-SiO2 structures formed by oxygen implantation and subsequent furnace or lamp annealing. The experiments were conducted with 413.1 nm laser light to probe only the thin Si layers at the top of the structures. The Raman spectra of the furnace-annealed samples are red shifted and broadened when compared with a virgin Si surface. The shifts and broadenings decrease with increasing annealing temperatures but they are still present in samples annealed above 1250°C for 3 h. No shifts or broadenings affect the Raman peaks of the layers, which were lamp annealed …
Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart
Slip Dislocation Formation During Continuous Wave Laser Annealing Of Silicon, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.