Engineering Commons^™

Modeling Dewetting, Demixing, And Thermal Effects In Nanoscale Metal Films, Ryan Howard Allaire

Dissertations

Thin film dynamics, particularly on the nanoscale, is a topic of extensive interest. The process by which thin liquids evolve is far from trivial and can lead to dewetting and drop formation. Understanding this process involves not only resolving the fluid mechanical aspects of the problem, but also requires the coupling of other physical processes, including liquid-solid interactions, thermal transport, and dependence of material parameters on temperature and material composition. The focus of this dissertation is on the mathematical modeling and simulation of nanoscale liquid metal films, which are deposited on thermally conductive substrates, liquefied by laser heating, and subsequently …

Design Of Mask For Striped Filters And Thin-Film Multi-Layer Emissivity Modeling For Multi-Wavelength Imaging Pyrometer, Jitesh Navinchandra Shah

Theses

Multi-Wavelength Imaging Pyrometry (M-WIP) measures thermal radiation of any target (color or gray) in multiple narrow-spectral-regions and can simultaneously determine target temperature and emissivity. One approach for measuring radiation at multiple wavelengths using a 320X244 element Pt-Si SBD infrared camera is to use narrow-band striped filters deposited on a transparent substrate with proper alignment. The major focus of this thesis was the design of a four layer mask for investigating the feasibility of defining three-wavelength striped filters compatible with focal plane array. This mask design allows twelve distinct narrow band striped filter geometries and four test-patterns on a 4-inch silicon …

Synthesis And Characterization Of Silicon Nitride Films Deposited By Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane, Yanyao Yu

Theses

Silicon nitride thin films were deposited on silicon substrates using Diethylsilane (DES) and ammonia by Plasma Enhanced Chemical Vapor Deposition (PECVD) over a temperature range of 100 - 300°C, a pressure range of 0.2 - 0.6 torr, and a ratio of NH₃/DES was varied from 6 - 26. The R.F. power and frequency were kept at 0.15 watts/cm^{2 and 100 KHz respectively. DES flow rate was set at 15 sccm for all experiments in this study. One set of experiments were performed at different values of one parameter while the other parameters were kept constant.}

The deposition …

Synthesis And Characterization Of Lpcvd Boron Nitride Films For X-Ray Lithography, Wen-Pin Kuo

Theses

Boron nitride thin films were deposited on silicon and fused quartz substrates using ammonia and the liquid precursor borane-triethylamine complex (TEAB) by low pressure chemical vapor deposition over a temperature range of 300-850°C, a pressure range of 0.21-0.6 torr, and an ammonia flow rate range of 0-740 sccm. An increased in the nitrogen content in the film due to the addition of ammonia flow resulted in a pronounced improvement in the optical transmission, an increase in the film uniformity and a decrease in the depletion effect. IR spectra of the films showed an asymmetrical wide band centered around 1400 cm …

Low Temperature Synthesis And Characterization Of Lpcvd Silicon Dioxide Films Using Diethylsilane, Chakravarthy Srinivasa Gorthy

Theses

Diethylsilane (DES) has been used as a precursor to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 350 to 475°C thus allowing the use of the material as an intermetal dielectric or as a top layer passivation coating in microelectronic devices. In that process, the growth rate was observed to follow an Arrhenius behavior yielding an activation energy of 10 kcal/mol. The growth rate was also observed to increase with higher pressure and to vary as a function of the square root of the DES flow rate and O …

Mathematical Modeling Of Chemical Vapor Deposition Processes And Its Application To Thin Film Technology, Norman W. Loney

Dissertations

A number of workers in the field of Chemical vapor deposition (CVD) have presented mathematical models in the literature. Some workers were able to produce analytical expressions for the interwafer concentration profile. These analytical expressions were based entirely on zero or first order chemical reaction rates. Until now, it appears that a chemical reaction rate expression that is not zero or first order directly, must be handled by a numerical scheme.

Presented herein is a mathematical model with an analytical interwafer concentration profile. This concentration profile is neither zero nor first order but shifts from zero to first order as …

Synthesis And Characterization Of Lpcvd Silicon Carbide Thin Films For X-Ray Lithography, Mahalingam Bhaskaran

Theses

Amorphous silicon carbide thin films were fabricated using low pressure chemical deposition method with a single liquid precursor, di tertiary butyl silane. The films were deposited for a temperature range of 500-850°C and at different pressures ranging from 0.05 to 1 torr. The growth rate of the films deposited at constant pressure of 0.2 torr with a flow rate of 60 sccm, was found to follow an Arrehenius Behavior in the temperature range of 600 - 675°C, yielding an activation energy of 32.5 k cal mol^-1 . IR spectroscopic study showed an absorption peak centered at 780 cm^{-1 …}