Engineering Commons^™

Epitaxial Growth Of Iii-Nitride Nanostructures And Their Optoelectronic Applications, Moab Rajan Philip

Dissertations

Light-emitting diodes (LEDs) using III-nitride nanowire heterostructures have been intensively studied as promising candidates for future phosphor-free solid-state lighting and full-color displays. Compared to conventional GaN-based planar LEDs, III-nitride nanowire LEDs exhibit numerous advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect due to the effective lateral stress relaxation, promising high efficiency full-color LEDs. Beside these advantages, however, several factors have been identified as the limiting factors for further enhancing the nanowire LED quantum efficiency and light output power. Some of the most probable causes have been identified as due to the lack of carrier confinement in …

Electrical, Electronic And Optical Properties Of Mose2 And Wse2, Sushant Shashikant Rassay

Theses

Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe₂ and WSe₂ have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene.

In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe₂ and WSe₂ are studied. The electronic band structures are presented for …

Synthesis And Characterization Of Metal Oxide Semiconductors For Photoelectrochemical Hydrogen Production, Sudhakar Shet

Dissertations

The goal of this thesis is to investigate the properties of metal-oxide thin films on fluorine-doped tin oxide (FTO)-coated glass substrates, prepared by using radio- frequency (RF) reactive magnetron sputtering for photoelectrochemical (PEC) applications. Metal-oxide thin films as a photoelectrode are of special interest for PEC systems to produce hydrogen in an aqueous solution by solar energy due to their low cost and potential stability.

The following list represents some of the accomplishments and results of this work:

• Narrowing of N-incorporated ZnO (ZnO:N) was achieved by reactive sputtering in a O₂/N₂ mixture ambient, and ZnO:N films with …

Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale

Theses

Semiconductor random access memories are complex systems that can be described by performance parameters such as memory cycle time, access delays, storage capacity, bit packing density, chip area and retention time. In this thesis, tradeoffs between cycle time, chip area, and storage size as reflected by bit line capacitance (Cbl) were studied as a function of particular design variables: memory cell capacitance (Cc); CMOS flip-flop sense amplifier (SA) transistor sizes; and size of precharge (PC), and word line (WL) switches. Performance was optimized using circuit simulation software, HSPICE, to observe DRAM and SRAM waveforms. With TSMC 0.18 micron technology, minimum …

Characterization And Mapping Of Crystal Defects In Silicon Carbide, Ejiro Emorhokpor

Theses

Silicon carbide (SiC) is a semiconductor with attractive properties, such as a wide bandgap (3. 26 eV), high dielectric strength, and high thermal conductivity that make it suitable for high power, highspeed electronic devices. A major roadblock to its wider application is the presence of defects, particularly micropipes and dislocations, in SiC wafers produced today and decreasing density of these defects is the most important challenge of the industry. The goal of this thesis was to design, build and test a system for detection and analysis of the defects in SiC wafers. The system is based on the reflection optical …

Formation And Characterization Of N/P Shallow Junctions In Sub-Micron Mosfets, Sridhar Madishetty

Theses

Semiconductors are the burgeoning industries in today's information age. Silicon based microelectronic devices are shrinking day-by-day in accord with the scaling dimensions reported by the International Technology Roadmap for Semiconductors (ITRS). There have been many semiconductor models and simulation programs constantly keeping pace with the continuously evolving scaling dimensions, process technology, performance and cost. Electrical characterization plays a vital role in determining the electrical properties of materials and device structures. Silicon based Metal Oxide Semiconductor Field Effect Transistor (MOSFET) forms the basis of Complimentary Metal Oxide Semiconductor (CMOS) circuits. Today's aggressive scaling approaches in silicon Integrated Circuit (IC) technology require …

Fdtd-Based Full Wave Co-Simulation Model For Hybrid Electromagnetic Systems, Tong Li

Dissertations

In high-frequency ranges, the present electronic design automation software has limited capabilities to model electromagnetic (EM) systems where there are strong field effects influencing their characteristics. In this situation, a full-wave simulation tool is desired for the analysis and design of high-speed and non-linear EM systems. It is necessary to explore the interaction between the field and electronic components during a transient process when field effects are more significant. The finite-difference time-domain (FDTD) technique receives growing attention in the area of EM system analysis and simulation due to its simplicity, flexibility and robustness. It is a full-wave simulation method that …

Investigation Of Optical Properties Of Inp, Ain And Sapphire For Applications In Non-Contact Semiconductor Process Monitoring, Rajasekhar Velagapudi

Theses

The objective of this thesis was to develop a reliable multi-wavelength pyrometer for simultaneous measurement of the wafer temperature and its optical properties in the wavelength range of 1 to 20 microns and temperature range of 30 to 1500° C. The spectral emissometer has been utilized for measurement of the temperature dependent optical properties of InP, AlN and Sapphire. The experimental results presented in this thesis showed that the measurement of high temperature optical properties could be performed reliably with a novel approach using the spectral ernissometer. The temperature determination capability of the emissometer was tested and verified using a …

Measurements Of Basic Semiconductor Properties, Abdolreza Ariantaj

Theses

Mobility, resistivity, and total impurity concentration of several purchased p-type silicon samples with known resistivities were measured by Hall effect, experiments utilizing the Van Der Pauw method. The silicon samples will serve as Hall effect standards for future measurements on other semiconductor materials, particularly gallium nitride ion cluster beam (ICB) deposited thin films. The samples which were Freshly etched with hydrofluoric acid had measurement values of 455 cm ² / V.sec, 45.9 Ω cm, and 2.6 X 10¹⁴ cm³ for mobility, resistivity, and total impurity concentration, respectively. The mobility values were within 9.9 per cent, of the published values …

The Purification, Analysis And Growth Of Single Crystals Of Organic Semiconductors, Melvin Leonard Druin

Theses

The purpose of this investigation was to design and construct a furnace for growing large single crystals of organic compounds by slow crystallization from the melt by the Bridgman technique. The crystals obtained by this furnace will be used in a later investigation of the intrinsic electrical and optical properties of organic semiconductors.

The methods describe have been used width success to produce large single crystals of anthracene and ethyl-p aminobenzoate with diameters of 1/2 inch.

The most promising methods of purification of anthracene, which were chemical synthesis, washing, recrystallization from solvents, sublimation, dimerization, co-distallatian and zone refining have been …