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Supercritical-Carbon Dioxide-Assisted Cyclic Deposition Of Metal Oxide And Metal Thin Films, Dipak Barua, Theodosia Gougousi, Erin D. Young, Gregory N. Parsons
Supercritical-Carbon Dioxide-Assisted Cyclic Deposition Of Metal Oxide And Metal Thin Films, Dipak Barua, Theodosia Gougousi, Erin D. Young, Gregory N. Parsons
Chemical and Biochemical Engineering Faculty Research & Creative Works
Thin films of aluminum oxide and palladium were deposited on silicon at low temperatures (70-120 °C) by a cyclic adsorption/reaction processes using supercritical CO2 solvent. Precursors included Al(hfac)3, Al(acac)3, and Pd(hfac)2, and aqueous H2O2, tert-butyl peracetate, and H2 were used as the oxidants or reductants. For the precursors studied, growth proceeds through a multilayer precursor adsorption in each deposition cycle, and film thickness increased linearly with the number of growth cycles.