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Electrical and Computer Engineering Faculty Research & Creative Works
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Full-Text Articles in Engineering
Direct Measurement Of Dynamic Capacitance, Norman G. Dillman
Direct Measurement Of Dynamic Capacitance, Norman G. Dillman
Electrical and Computer Engineering Faculty Research & Creative Works
No abstract provided.
Automation In The Design Of Asynchronous Sequential Circuits, Richard T. Smith, James H. Tracey, W. L. Schoeffel, G. K. Maki
Automation In The Design Of Asynchronous Sequential Circuits, Richard T. Smith, James H. Tracey, W. L. Schoeffel, G. K. Maki
Electrical and Computer Engineering Faculty Research & Creative Works
Sequential switching circuits are commonly classified as being either synchronous or asynchronous. Clock pulses synchronize the operations of the synchronous circuit. The operation of an asynchronous circuit is usually assumed to be independent of such clocks. The operating speed of an asynchronous circuit is thus limited only by basic device speed. One disadvantage of asynchronous circuit design has been the complexity of the synthesis procedures for large circuits.
A Direct Method Of Measuring Stray Load Loss In Dc Machines, Kanaiyalal R. Shah, George Mcpherson
A Direct Method Of Measuring Stray Load Loss In Dc Machines, Kanaiyalal R. Shah, George Mcpherson
Electrical and Computer Engineering Faculty Research & Creative Works
Stray load loss in dc machines is denned as the difference between the actual loss under load and the well-recognized loss. This paper describes a simple, reliable, and direct method of measuring this loss by means of a proposed short-circuit test with a correction factor for uncompensated-type dc machines. It also describes the sources and components of stray load losses as they occur under short-circuit test. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
A Simple Design Algorithm For Synthesis Of Multilevel Combinational Networks, James H. Tracey
A Simple Design Algorithm For Synthesis Of Multilevel Combinational Networks, James H. Tracey
Electrical and Computer Engineering Faculty Research & Creative Works
An algorithm is presented for the synthesis of combinational networks with a constrained arrangement of ANDS, ORS, NANDS, NORS, and inverters. The algorithm is easily presented to students in an introductory logic design course and has considerable application in modern practical logic design. Many texts available for a first course in logic design give very limited practical guidance for synthesis of networks under constraints outlined here. It is suggested that the algorithm presented here be furnished as supplementary material in the introductory course. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
A Novel Method For Solving The Uniform Distributed Network Analysis Problem, Robert C. Peirson, Edward C. Bertnolli
A Novel Method For Solving The Uniform Distributed Network Analysis Problem, Robert C. Peirson, Edward C. Bertnolli
Electrical and Computer Engineering Faculty Research & Creative Works
An application of the Laplace transform method of Ogata to the solution of the uniform distributed network analysis problem is described. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
Recombination Statistics For Neutron Bombarded Silicon Transistors, M. C. Chow, J. L. Azarewiczt, C. A. Goben
Recombination Statistics For Neutron Bombarded Silicon Transistors, M. C. Chow, J. L. Azarewiczt, C. A. Goben
Electrical and Computer Engineering Faculty Research & Creative Works
This paper presents a recombination statistical model for the neutron-induced base current component reported previously. The derivation was based on the following: 1) the current equation for the induced current component developed previously; 2) the Shockley-Read-Hall statistics for holes and electrons; and 3) the recombination statistics derived by Sah, Noyce and Shockley for sites in the bulk space-charge region. The recombination statistics model depends on the diffusion potential, the junction voltage, the activation energy, temperature, and the ratio of capture cross-sections for holes and electrons. The utility of such a recombination statistical model is illustrated by using measured parameters to …
Radiation And Annealing Characteristics Of Neutron Bombarded Silicon Transistors, L. S. Su, G. E. Gassner, C. A. Goben
Radiation And Annealing Characteristics Of Neutron Bombarded Silicon Transistors, L. S. Su, G. E. Gassner, C. A. Goben
Electrical and Computer Engineering Faculty Research & Creative Works
Operating a silicon planar epitaxial transistor in the inverse configuration allows one to demonstrate clearly the importance of the neutron-induced base current component and its degradation of the emitter efficiency, and, because of the much larger depletion layer, to compute a volume dependent damage constant applicable to all silicon p-n junctions. The importance of minimizing the absolute change versus relative change in radiation hardening studies is clearly illustrated. Surface effects were found to be significant for transistors mounted in gas-filled cans. The diffusion potential was predicted, on theoretical grounds, to vary with neutron fluence, and the theory was experimentally confirmed. …
Electric Field Investigations And A Model For Electrical Liquid Spraying, Wallace E. Deshon, Ralph S. Carson
Electric Field Investigations And A Model For Electrical Liquid Spraying, Wallace E. Deshon, Ralph S. Carson
Electrical and Computer Engineering Faculty Research & Creative Works
The equation generally used for determining the electric field at the liquid tip in electrical spraying of liquids was originally derived for determining the electric field around a metal tip in the extraction of electrons from metals. In the present paper experimental data were taken at the instant of spraying to determine the validity of using this equation for liquid tips. the results indicate that the value of electric field given by this equation needs to be increased by about 20% in the normal range of operation. A model for the spraying mechanism of the liquid is also presented. © …
Neutron Radiation Damage In Silicon Transistors, C. A. Goben, F. M. Smits, J. L. Wirth
Neutron Radiation Damage In Silicon Transistors, C. A. Goben, F. M. Smits, J. L. Wirth
Electrical and Computer Engineering Faculty Research & Creative Works
In the investigation of base and collector current as a function of the emitter-to-base voltage, previous studies have shown that neutron-induced base current has components originating in the emitter space charge region as well as the neutral base region. This study shows that while the low injection level neutron-induced base current is dominated by the space charge component, the high injection behavior appears to be controlled by recombination in the neutral base region. Additional experiments performed in special tetrode transistors and van der Pauw-type samples indicate that changes in collector current are dominated by recombination in the neutral base, while …
Design Of Truncated Sequential Tests For Rapidly Fading Radar Targets, Norval D. Wallace
Design Of Truncated Sequential Tests For Rapidly Fading Radar Targets, Norval D. Wallace
Electrical and Computer Engineering Faculty Research & Creative Works
Curves and equations are presented from which the exact performance of truncated sequential tests can be determined for one important case: the biased square-law detector for the detection of rapidly fading targets. The method of generating functions is used to derive probability distributions for sample size. It is shown how these probability distributions can be used to determine truncation errors and the effects of multiple-resolution elements. Sample calculations are performed to determine the effects of a particular truncation procedure. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.