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Replacing −Ch2ch2– With −Conh– Does Not Significantly Change Rates Of Charge Transport Through Agts-Sam//Ga2o3/Egain Junctions, Martin M. Thuo, William F. Reus, Felice C. Simeone, Choongik Kim, Michael D. Schulz, Hyo Jae Yoon, George M. Whitesides
Replacing −Ch2ch2– With −Conh– Does Not Significantly Change Rates Of Charge Transport Through Agts-Sam//Ga2o3/Egain Junctions, Martin M. Thuo, William F. Reus, Felice C. Simeone, Choongik Kim, Michael D. Schulz, Hyo Jae Yoon, George M. Whitesides
Martin M. Thuo
This paper describes physical-organic studies of charge transport by tunneling through self-assembled monolayers (SAMs), based on systematic variations of the structure of the molecules constituting the SAM. Replacing a −CH2CH2– group with a −CONH– group changes the dipole moment and polarizability of a portion of the molecule and has, in principle, the potential to change the rate of charge transport through the SAM. In practice, this substitution produces no significant change in the rate of charge transport across junctions of the structure AgTS-S(CH2)mX(CH2)nH//Ga2O3/EGaIn (TS = template stripped, X = −CH2CH2– or −CONH–, and EGaIn = eutectic alloy of gallium and …
Statistical Tools For Analyzing Measurements Of Charge Transport, William F. Reus, Christian A. Nijhuis, Jabulani R. Barber, Martin M. Thuo, Simon Tricard, George M. Whitesides
Statistical Tools For Analyzing Measurements Of Charge Transport, William F. Reus, Christian A. Nijhuis, Jabulani R. Barber, Martin M. Thuo, Simon Tricard, George M. Whitesides
Martin M. Thuo
This paper applies statistical methods to analyze the large, noisy data sets produced in measurements of tunneling current density (J) through self-assembled monolayers (SAMs) in large-area junctions. It describes and compares the accuracy and precision of procedures for summarizing data for individual SAMs, for comparing two or more SAMs, and for determining the parameters of the Simmons model (β and J0). For data that contain significant numbers of outliers (i.e., most measurements of charge transport), commonly used statistical techniques—e.g., summarizing data with arithmetic mean and standard deviation and fitting data using a linear, least-squares algorithm—are prone to large errors. The …
Electrical Resistance Of Agts–S(Ch2)N−1ch3//Ga2o3/Egain Tunneling Junctions, Ludovico Cademartiri, Martin M. Thuo, Christian A. Nijhuis, William F. Reus, Simon Tricard, Jubulani R. Barber, Rana N.S. Sodhi, Peter Brodersen, Choongik Kim, Ryan C. Chiechi, George M. Whitesides
Electrical Resistance Of Agts–S(Ch2)N−1ch3//Ga2o3/Egain Tunneling Junctions, Ludovico Cademartiri, Martin M. Thuo, Christian A. Nijhuis, William F. Reus, Simon Tricard, Jubulani R. Barber, Rana N.S. Sodhi, Peter Brodersen, Choongik Kim, Ryan C. Chiechi, George M. Whitesides
Martin M. Thuo
Tunneling junctions having the structure AgTS–S(CH2)n−1CH3//Ga2O3/EGaIn allow physical–organic studies of charge transport across self-assembled monolayers (SAMs). In ambient conditions, the surface of the liquid metal electrode (EGaIn, 75.5 wt % Ga, 24.5 wt % In, mp 15.7 °C) oxidizes and adsorbs―like other high-energy surfaces―adventitious contaminants. The interface between the EGaIn and the SAM thus includes a film of metal oxide, and probably also organic material adsorbed on this film; this interface will influence the properties and operation of the junctions. A combination of structural, chemical, and electrical characterizations leads to four conclusions about AgTS–S(CH2)n−1CH3//Ga2O3/EGaIn junctions. (i) The oxide is ∼0.7 …