Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Engineering Conferences International

Nanomechanical Testing in Materials Research and Development V

2015

Semiconductors

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Size Effects And Deformation Mechanisms In Diamond And Silicon, Jeffrey Wheeler, R. Raghavan, J. Rabier, J. Wehrs, J. Michler Oct 2015

Size Effects And Deformation Mechanisms In Diamond And Silicon, Jeffrey Wheeler, R. Raghavan, J. Rabier, J. Wehrs, J. Michler

Nanomechanical Testing in Materials Research and Development V

At ambient temperature and pressure, most of the semiconductor materials are brittle. Traditionally, use of confining pressure via indentation or a hydrostatic confining medium [1, 2] has been required to study the plasticity of such brittle materials. In the case of group IV semiconductors (Diamond, Silicon, and Germanium) the situation is further complicated by pressure-induced phase transformations occurring underneath the indentations. However, previous work has demonstrated that sample miniaturization can also prevent the onset of cracking and allow plastic deformation [3]. Recent advances in in situ instrumentation have enabled micro-compression techniques to extract temperature- and …


Dislocation Dipoles And The Nucleation Of Cracks In Silicon Nanopillars, J. Rabier, F. Abed El Nabi, J. Godet, S. Brochard, L. Pizzagalli Oct 2015

Dislocation Dipoles And The Nucleation Of Cracks In Silicon Nanopillars, J. Rabier, F. Abed El Nabi, J. Godet, S. Brochard, L. Pizzagalli

Nanomechanical Testing in Materials Research and Development V

To understand the brittle to ductile transtion at small scale in silicon nanopillars, plastic deformation of silicon nanopillars was investigated by atomistic simulations. Perfect dislocations were found to be nucleated from surfaces and nano cavities were evidenced resulting from dislocation dipoles annihilation. The formation of such cavities is consistent with previous atomistic calculations showing that the annihilation of dislocation vacancy dipole of perfect shuffle dislocations is associated to the formation of vacancy clusters in silicon and diamond [1]. In nanopillars such cavities contribute to the nucleation of cracks [2]. This mechanism of crack nucleation is relevant to single slip deformation …