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Full-Text Articles in Engineering
Microwave Signal Generation Using Self-Heterodyning Of A Fast Wavelength Switching Sg-Dbr Laser, Michael A. Bernacil, Shame O' Connor, Ben Maher, Andew Dekelaita, Dennis J. Derickson
Microwave Signal Generation Using Self-Heterodyning Of A Fast Wavelength Switching Sg-Dbr Laser, Michael A. Bernacil, Shame O' Connor, Ben Maher, Andew Dekelaita, Dennis J. Derickson
Electrical Engineering
Microwave signal generation using self-heterodyning of a single wavelength tunable SG-DBR laser is demonstrated. Microwave signals are established by quickly hopping back and forth between two optical wavelengths. These wavelengths are made time coincident through a delay line interferometer. The output of the interferometer is photodetected resulting in a CW microwave signal. This method does not require conventional master-slave laser configurations, external microwave drive sources, or a mode locked laser used to beat dual longitudinal modes. Microwave signals up to 12 GHz have been measured by frequency modulating the phase section of the SG-DBR laser with low frequency RF square …
Sgdbr Single-Chip Wavelength Tunable Lasers For Swept Source Oct, Dennis J. Derickson, Mike Bernacil, Andrew Dekelaita, Ben Maher, Shane O'Connor, Mathew N. Sysak, Leif Johanssen
Sgdbr Single-Chip Wavelength Tunable Lasers For Swept Source Oct, Dennis J. Derickson, Mike Bernacil, Andrew Dekelaita, Ben Maher, Shane O'Connor, Mathew N. Sysak, Leif Johanssen
Electrical Engineering
Sampled Grating Distributed Bragg Reflector (SGDBR) monolithic tunable lasers are now entering the production phase in telecommunications applications. These tunable lasers are unique in that they offer wide wavelength tuning (1525 to 1565 nm), fast wavelength tuning (5 ns) and high speed amplitude modulation all on the same monolithic chip1,2,3,4. This work studies the applicability of SGDBR monolithic tunable laser diodes for biomedical imaging using swept-wavelength or Fourier domain optical coherence tomography. This paper will present our work involved with utilizing the strengths (table 1) of this SGDBR laser class and mitigating the weaknesses (table 2) of this device for …
Repetition Frequency Stabilisation Of Passively Mode-Locked Semiconductor Lasers, R. J. Helkey, Dennis J. Derickson, A. Mar, J. G. Wasserbauer, J. E. Bowers, R. L. Thornton
Repetition Frequency Stabilisation Of Passively Mode-Locked Semiconductor Lasers, R. J. Helkey, Dennis J. Derickson, A. Mar, J. G. Wasserbauer, J. E. Bowers, R. L. Thornton
Electrical Engineering
The repetition frequency of an external cavity mode-locked GaAs semiconductor diode laser has been stabilized by voltage controlled electrical feedback. The phase noise has been reduced by 40dB at 1 kHz offset from the carrier and timing jitter reduced from more than 30ps to 4ps. This technique can be used to stabilize millimetre-wave mode-locked lasers.