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Low-Voltage Bandgap Reference Design Utilizing Schottky Diodes, David L. Butler, R. Jacob Baker

Electrical and Computer Engineering Faculty Publications and Presentations

As semiconductor device geometries continue to shrink, the corresponding voltage applied across the processed devices must also be reduced. Therefore reference voltages used in integrated circuits will need to be reduced as well. A typical bandgap reference (BGR) voltage generator uses PN junction diodes or PNP BJT’s to bias the reference. The forward bias voltage of these devices is typically 0.7 volts, and has a limiting effect on how low a reference voltage can be generated, as well as how low a system voltage can be applied. Schottky, or metal-semiconductor (MS), diodes have a lower forward bias voltage, typically of …