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Amorphous Silicon For 157nm Lithography, Carlos Fonseca
Amorphous Silicon For 157nm Lithography, Carlos Fonseca
Journal of the Microelectronic Engineering Conference
Amorphous silicon (a-Si) was investigated as a potential masking material at 157nm wavelength. Characterization of a-Si included film deposition on CaF2 (calcium fluoride) substrates through reactive sputtering, spectroscopic ellipsometry in the UV range, reflection and transmission at 157nm wavelength, and extraction of optical constants (n&k) with a commercial software package. Experimental results suggest that a-Si films deposited at RIT have similar optical constants as published values in the UV range. Simulation work suggests that a 50A silicon nitride film can be used as an anti-reflective layer to minimize reflections at the a-Si I air boundary. Consequently, silicon nitride films were …