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Ion Irradiation Induced Damage And Dynamic Recovery In Single Crystal Silicon Carbide And Strontium Titanate, Haizhou Xue

Doctoral Dissertations

The objective of this thesis work is to gain better understanding of ion-solid interaction in the energy regime where electronic and nuclear energy loss are comparable. Such responses of materials to ion irradiations are of fundamental importance for micro-electronics and nuclear applications. The ion irradiation induced modification for the crystal structure, the physical and chemical properties etc. may strongly affect the performance of functional materials that needs to be better understood.

Experimentally, ion irradiation induced damage accumulation and dynamic recovery in SiC [silicon carbide] and SrTiO₃ [strontium titanate] were studied in this dissertation project. Five chapters are presented: Firstly, …

High Temperature Cmos Silicon Carbide Asynchronous Circuit Design, Landon John Caley

Graduate Theses and Dissertations

Designing a digital circuit to operate in an extreme temperature range is a challenge with increasing demand for a solution. Large variations in temperature have a distinct impact on electron mobilities causing substantial changes to the threshold voltage of the devices. These physical changes affect the setup and hold times of clocked components, such as D-Flip Flops, of a traditional synchronous digital circuit. Focusing primarily on high temperature circuit operation, this dissertation presents a digital circuit design methodology pairing an asynchronous circuit design paradigm called NULL Convention Logic (NCL) as well as traditional Boolean circuitry with a wide-bandgap semiconductor material, …