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Investigation Into The Use Of Su8 In High Aspect Ratio Applications, Kody Okafor
Investigation Into The Use Of Su8 In High Aspect Ratio Applications, Kody Okafor
Journal of the Microelectronic Engineering Conference
The objective for this project was to investigate the feasibility of making high aspect ratio SU8 structures via contact lithography with a target of 10:1 and line width resolution of about 2μm. Factors investigated include exposure dose of 150mJ/cm2, 200mJ/cm2, 250mJ/cm2 and PEB times of 1.5mm, 3mm and 4.5mm. The responses were line width CD and sidewall angle. The approach was first to optimize the thickness of the resist coated. This was done by generating a spin speed curve for the SU8 formulation used. Secondly, was to optimize the line width CD. A 32 full factorial experiment was performed. From …