Engineering Commons^™

Transfer Process With 2-Dimensional Transitional Metal Dichalcogenides Materials, William Huang

Journal of the Microelectronic Engineering Conference

No abstract provided.

Fabrication Of Sub-300nm Fins At Rit By Sadp, Kelly Weiskittel

Journal of the Microelectronic Engineering Conference

No abstract provided.

Fabrication Of Photonic Lpcvd Silicon Nitride Waveguides, Robert Dalheim

Journal of the Microelectronic Engineering Conference

No abstract provided.

Single Electron Transistors For Molecular Computer Readout, Matthew Filmer

Journal of the Microelectronic Engineering Conference

No abstract provided.

Demonstration Of Record-High Mm-Wave Power Performance Using N-Polar Gallium Nitride Hemts, Brian Romanczyk

Journal of the Microelectronic Engineering Conference

Gallium Nitride high electron mobility transistors (GaN HEMTs) are proven to be well suited devices for highly efficient solid-state radio frequency power amplification, especially when high output power is desired. Existing GaN transistor technologies using the Ga-polar crystal orientation (0001) have been demonstrated operating at millimeter-wave frequencies (30 to 300 GHz). While these Ga-polar devices have demonstrated good large signal functionality, their performance has largely saturated. With growing interest in communication and imaging applications operating at mm-wave frequencies there is a need for transistors technologies with higher performance at these frequencies. This work focuses on the development and demonstration of …

Biristor Array Investigation, Jeremiah Leit

Journal of the Microelectronic Engineering Conference

No abstract provided.

Fefet Fabrication And Characterization At Rit, Jordan Merkel

Journal of the Microelectronic Engineering Conference

No abstract provided.

Fabrication Of Photonic Lpcvd Silicon-Nitride Waveguides, Robert Dalheim

Journal of the Microelectronic Engineering Conference

The purpose of this project was to develop a repeatable process flow for Silicon-Nitride optical waveguides at RIT. Previous projects have fabricated optical waveguides out of amorphous silicon and polymers but never out of Nitride. The grating coupler pitch was varied from 700nm to 1500nm and the length was varied from 100μm to 1000μm. A target Nitride deposition thicknesses of 250nm, 500nm, and 750nm were deposited through LPCVD methods and were measured to be 150nm, 450nm, and 770nm. The thicknesses were chosen to be half the waveguide width for optimal transmission. Fabrication was successful for all three waveguide widths on …

Fabrication Of Algan/Gan High Electron Mobility Transistors, Vijay Gopal Thirupakuzi Vangipuram

Journal of the Microelectronic Engineering Conference

A first attempt at fabricating AlGaN/GaN High Electron Mobility Transistors (HEMTs) on a Si substrate was made at RIT. A basic process flow was developed to fabricate enhancement-mode devices. The proposed fabrication flow was attempted and completed. The single metallization step using Ni as the metal yielded Schottky contacts in source, drain and gate regions.

Fabrication Of Algan/Ganhigh Electron Mobility Transistors, Vijay Gopal T.V.

Journal of the Microelectronic Engineering Conference

No abstract provided.

Etching Process Characterization Of Nitride And Polysilicon Layer Using Trioniii Etcher, Sudmun Habib

Journal of the Microelectronic Engineering Conference

No abstract provided.

Transfer Process With 2d Transitional Metal Dichalcogenides Materials, William Huang

Journal of the Microelectronic Engineering Conference

The goal of this project is to expand RIT’s knowledge on non-traditional 2D materials and to develop a tape-transfer process for single to double atomic layers of Molybdenum Disulfide from a substrate containing bulk MoS2 to a blank substrate. The exfoliated materials will be inspected and characterized through both optical microscope and Raman Spectroscopy. The ultimate goal is to build it into devices to conduct electrical testing for its material and electrical properties. Material and electrical properties of the exfoliated materials will further be investigated and compared to MedeA simulation results.

Transfer Process With 2d Transitional Metal Dichalcogenides Materials, William Huang

Journal of the Microelectronic Engineering Conference

No abstract provided.

Capping Layers For Increased Thermal Stability Of Igzo Thin-Film Transistors, Jason Konowitch

Journal of the Microelectronic Engineering Conference

The goal of this project was to initially re-establish a baseline process for the fabrication of Indium-Gallium-Zinc Oxide thin-film transistors, shown in Figure 1, that have been a part of ongoing research here at RIT. After bringing the fabricated devices back into a reliable process, capping layer differences were investigated to determine their effects on device thermal stability. The time of the passivation layer anneal was varied between 3 and 4 hours for the primary lot and the temperature of the ALD capping layer was varied between 150°C and 200°C. The devices were tested and then thermally stressed on a …

Capping Layers For Increased Thermal Stability Of Igzo Thin-Film Transistors, Jason Konowitch

Journal of the Microelectronic Engineering Conference

No abstract provided.

Biristor Array Investigation, Jeremiah Dyson Leit

Journal of the Microelectronic Engineering Conference

No abstract provided.

Fefet Process Integration And Characterization, Jordan Merkel

Journal of the Microelectronic Engineering Conference

Hafnium oxide-based ferroelectrics are gaining popularity in the field of non-volatile memory due to their superior scalability in reference to traditional, lead-based ferroelectric materials and their compatibility with CMOS technology. Ferroelectric field-effect transistors (FeFETs) incorporate such materials in their gate stack, providing for bi-stable transfer characteristics and threshold voltages, which can be interpreted as storage values of 0 or 1. The difference between these threshold voltages is a FeFET figure of merit, referred to as the memory window (MW) of the device.

A process for fabricating n-channel FeFETs in-house at RIT has been developed, incorporating atomic layer deposition (ALD) of …

Fabrication Of Sub-300 Nm Fins At Rit By Sadp, Kelly Weiskittel

Journal of the Microelectronic Engineering Conference

The goal of fabricating sub-300 nm fins with the implementation of self-aligned double patterning (SADP) at Rochester Institute of Technology’s (RIT’s) Semiconductor & Microsystems Fabrication Laboratory (SMFL) was not realized completely. An energy dose meander was completed in order to qualify a new resist being used with the fabrication process that Christopher O’Connell developed for his graduate thesis. Manual spin coating of Spin-on-Carbon (SOC), bottom antireflective coating (BARC), and photoresist were all qualified. A 2:1 ratio of AZ MiR 701 photoresist to PGMEA was used to thin the resist for implementation of a 300 nm coat. Low pressure chemical vapor …

Biristor Array Investigation, Jeremiah Leit

Journal of the Microelectronic Engineering Conference

The biristor is a device that has interesting I-V characteristics. When it is current driven the reference device exhibits neural spiking. This neural spiking is characterized by a differing voltage at a steady current. If all of the devices on the chip that was designed exhibit this neural spiking behavior it has the potential of being used as a nueromorphic chip given its layout. The other method of operation is one in which a hysteresis loop is formed. This hysteresis loop can be used for hardware based encryption. This is because the device acts differently to the same stimulus based …

Fefet Fabrication And Characterization At Rit, Jordan Merkel

Journal of the Microelectronic Engineering Conference

No abstract provided.

Fabrication Of Sub-300 Nm Fins At Rit By Sadp, Kelly Weiskittel

Journal of the Microelectronic Engineering Conference

No abstract provided.

Fabrication Of Photonic Lpcvd Silicon-Nitride Waveguides, Robert Dalheim

Journal of the Microelectronic Engineering Conference

No abstract provided.

Fabrication Of Algan/Gan Hemts, Vijay Gopal

Journal of the Microelectronic Engineering Conference

No abstract provided.

Etching Process Characterization Of Nitride Layer And Poly Silicon Layer Using Trion Iii Etcher, Sudmun Habib

Journal of the Microelectronic Engineering Conference

No abstract provided.

Capping Layers For Increased Thermal Stability Of Igzo Thin-Film Transistors, Jason Konowitch

Journal of the Microelectronic Engineering Conference

No abstract provided.

Super Activation Obtained By Melt Uv Laser Annealing Of Highly Surface-Segregated Dopants In High Ge Content Sige, Leonard M. Rubin

Journal of the Microelectronic Engineering Conference

No abstract provided.

Livabilitylab Sponsored Project:Force And Position Monitoring System Multidisciplinary Senior Design 1, Nick Petreikis

Journal of the Microelectronic Engineering Conference

No abstract provided.