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Growth, Characterisation, And Properties Of Bi1.8lu1.2fe3.6al1.4o12 Garnet Films Prepared Using Two Different Substrate Temperatures, Mohammad Alam, Mikhail Vasiliev, Kamal Alameh
Growth, Characterisation, And Properties Of Bi1.8lu1.2fe3.6al1.4o12 Garnet Films Prepared Using Two Different Substrate Temperatures, Mohammad Alam, Mikhail Vasiliev, Kamal Alameh
Mikhail Vasiliev
We prepare highly Bismuth substituted iron garnet of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 by using low and high substrate temperatures (250°C and 680°C) during the deposition process inside the vacuum chamber of RF magnetron sputtering system. The crystallisation process of this garnet type thin film materials are performed by means of optimised high temperature oven annealing process and conduct several characterisation techniques to obtain and evaluate their properties. All the optimally annealed samples possess very promising and attractive properties. Comparatively low coercive force (below 15 Oe) is achieved in garnet films prepared at high substrate temperature of 680°C, simultaneously with high MO …
Growth, Characterisation, And Properties Of Bi1.8lu1.2fe3.6al1.4o12 Garnet Films Prepared Using Two Different Substrate Temperatures, Mohammad Alam, Mikhail Vasiliev, Kamal Alameh
Growth, Characterisation, And Properties Of Bi1.8lu1.2fe3.6al1.4o12 Garnet Films Prepared Using Two Different Substrate Temperatures, Mohammad Alam, Mikhail Vasiliev, Kamal Alameh
Mikhail Vasiliev
We prepare highly Bismuth substituted iron garnet of composition type Bi1.8Lu1.2Fe3.6Al1.4O12 by using low and high substrate temperatures (250°C and 680°C) during the deposition process inside the vacuum chamber of RF magnetron sputtering system. The crystallisation process of this garnet type thin film materials are performed by means of optimised high temperature oven annealing process and conduct several characterisation techniques to obtain and evaluate their properties. All the optimally annealed samples possess very promising and attractive properties. Comparatively low coercive force (below 15 Oe) is achieved in garnet films prepared at high substrate temperature of 680°C, simultaneously with high MO …