Engineering Commons^™

Integrated Freestanding Single-Crystal Silicon Nanowires: Conductivity And Surface Treatment, Chung-Hoon Lee, Clark Ritz, Minghuang Huang, Michael Ziwisky, Robert Blise, Max Lagally

Electrical and Computer Engineering Faculty Research and Publications

Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 µm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO₂ support a model of Fermi level pinning near the conduction band. The I–V curves of the nanowires reveal a current carrier polarity reversal depending on Si–SiO₂ and Si–H bonds on the nanowire surfaces