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Electrical Activation Studies Of Silicon Implanted Alx Gal-X N And Coimplanted Gan, Elizabeth A. Chitwood

Theses and Dissertations

A comprehensive study of the electrical activation of silicon implanted Al_xGa_1-xN was performed as a function ion dose, anneal temperature, and aluminum mole fraction, Also, GaN coimplanted with silicon and nitrogen was investigated. Room temperature Hall effect measurements were used to determine carrier concentration and mobility. All the samples had a 500 Å encapsulant of AlN, and were implanted at room temperature with 200 keV silicon ions at doses ranging from 1x10¹³ to 1x10¹⁵ /sq cm. The GaN was also implanted with nitrogen under the same conditions in doses of 9x10¹² to 9x10 …