Engineering Commons^™

A Silicon Carbide Based Solid-State Fault Current Limiter For Modern Power Distribution Systems, Erik Darnell Johnson

Graduate Theses and Dissertations

The fault current limiter represents a developing technology which will greatly improve the reliability and stability of the power grid. By reducing the magnitude of fault currents in distribution systems, fault current limiters can alleviate much of the damage imposed by these events. Solid-state fault current limiters in particular offer many improved capabilities in comparison to the power system protection equipment which is currently being used for fault current mitigation. The use of silicon carbide power semiconductor devices in solid-state fault current limiters produces a system that would help to advance the infrastructure of the electric grid.

A solid-state fault …

A Silicon Carbide Linear Voltage Regulator For High Temperature Applications, Javier Antonio Valle Mayorga

Graduate Theses and Dissertations

Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.

This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option …

Semiconductor Nanocrystals: From Quantum Dots To Quantum Disks, Zheng Li

Graduate Theses and Dissertations

The bottom-up colloidal synthesis opened up the possibility of finely tuning and tailoring the semiconductor nanocrystals. Numerous recipes were developed for the preparation of colloidal semiconductor nanocrystals, especially the traditional quantum dots. However, due to the lack of thorough understanding to those systems, the synthesis chemistry is still on the empirical level. CdS quantum dots synthesis in non-coordinating solvent were taken as a model system to investigate its molecular mechanism and formation process, ODE was identified as the reducing agent for the preparation of CdS nanocrystals, non-injection and low-temperature synthesis methods developed. In this model system, we not only proved …

Plasma-Assisted Molecular Beam Epitaxial Growth Of Indium Nitride For Future Device Fabrication, Steven Paul Minor

Graduate Theses and Dissertations

The need for energy conservation has heightened the search for new materials that can reduce energy consumption or produce energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 eV) which spans the entire visible spectrum and encompasses a large portion of the available solar spectrum. Of the three root III-nitride semiconductors, AlN, GaN, and InN, InN has only recently become attainable epitaxially with qualities good enough …

Mott Transition And Electronic Structure In Complex Oxide Heterostructures, Jian Liu

Graduate Theses and Dissertations

Strongly correlated electron systems, particularly transition metal oxides, have been a focus of condensed matter physics for more than two decades since the discovery of high-temperature superconducting cuprates. Diverse competing phases emerge, spanning from exotic magnetism to unconventional superconductivity, in proximity to the localized-itinerant transition of Mott insulators. While studies were concentrated on bulk crystals, the recent rapid advance in synthesis has enabled fabrication of high-quality oxide heterostructures, offering a new route to create novel artificial quantum materials.

This dissertation details the investigation on ultrathin films and heterostructures of 3d⁷(t_2g⁶e_g¹) systems with …

Fabrication Of Vertical Silicon Nanowires Through Metal Assisted Deposition, Matthew Garett Young

Graduate Theses and Dissertations

Controlled and ordered growth of Si nanowires through a low temperature fabrication method compatible with CMOS processing lines is a highly desirable replacement to future electronic fabrication technologies as well as a candidate for a low cost route to inexpensive photovoltaics. This stems from the fact that traditional CMOS based electronics are hitting physical barriers that are slowing the Moore's Law trend as well as the demand for an inexpensive solar cell technology that can obtain grid parity. A fractional factorial growth study is presented that compares the growth of Au and Al catalyzed Si nanowires at temperatures ranging from …