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Characterization Analysis And Design Of Mid-Wave Infrared Iii- V-Based Type-Ii Superlattice Nbn Photodetectors For Space Applications, Alexander Timothy Newell
Characterization Analysis And Design Of Mid-Wave Infrared Iii- V-Based Type-Ii Superlattice Nbn Photodetectors For Space Applications, Alexander Timothy Newell
Electrical and Computer Engineering ETDs
The performance of the mid-wave infrared InGaAs/InAsSb nBn photodetector is investigated and its viability for space applications is assessed. Three structures are grown with unique absorber layer doping profiles via molecular beam epitaxy. Material and device characterizations are performed and analyzed to determine the effects of doping on fundamental material parameters and detector performance. Noise-equivalent irradiance is calculated to be a factor of 4x that of an ideal detector exhibiting Rule 07 dark current and 100% quantum efficiency, demonstrating high sensitivity. The structures are then irradiated with 63 MeV protons to evaluate the extent of performance degradation over the course …
Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal
Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal
Electrical and Computer Engineering ETDs
Silicon heterojunction solar cell of Heterojunction with Thin Intrinsic Layer (HIT) structure is a commercially available technology, and its market share will significantly increase by the next decade. With such a significant market share, any minor improvement in the device’s overall efficiency can be beneficial three folds - customer return on investment, industry revenue, and the overall carbon footprint (from manufacturing to recycling/ disposing of the device). Conventionally, device optimization for solar cells has been achieved using a hit & trial approach where multiple experiments are done to evaluate the best process conditions and device parameters. This approach has some …