Engineering Commons^™

Gesn Devices For Short-Wave Infrared Optoelectronics, Benjamin Ryan Conley

Graduate Theses and Dissertations

The electronics industry has a large silicon infrastructure for the manufacture of complementary-metal oxide semiconductor (CMOS) based electronics. The increasing density of Si based circuits has set a pace that is now pushing the physical limits of connectivity between devices over conventional wire based links. This has driven the increasing interest in Si based optoelectronics and to use the groundwork already established by the electronics industry for lower cost optical communications. The greatest limitation to this effort has been the incorporation of a Si based laser, which requires integration of a direct bandgap material within this CMOS process.

The Ge1-xSnx …

Photodetectors And Photovoltaic Devices Based On Semiconductor Nanomaterials, Jiang Wu

Graduate Theses and Dissertations

Photodetectors based various nanostructures and plasmon enhanced solar cells are investigated in this dissertation. The motivation of the dissertation rise is driven by urgent need of both high efficiency photodetectors and solar cells.

First, quantum dot infrared photodetectors have been intensely investigated due to their promise in high performance photodetectors. However, the strain-driven growth of quantum dots has hindered the progress of quantum dot photodetectors. The presence of strain in the device presents complexity in designing as well as defects. Therefore, in this project, new designs of quantum dot photodetector structures are presented to improve the control over detection wavelength. …

Fabrication Of Horizontal Silicon Nanowires Using A Thin Aluminum Film As A Catalyst, Khaja Hafeezuddin Mohammed

Graduate Theses and Dissertations

Silicon nanowires have been the topic of research in recent years for their significant attention from the electronics industry to grow even smaller electronic devices. The semiconductor industry is built on silicon. Silicon nanowires can be the building blocks for future nanoelectronic devices. Various techniques have also been reported in fabricating the silicon nanowires. But most of the techniques reported, grow vertical silicon nanowires. In the semiconductor industry, integrated circuits are designed and fabricated in a horizontal architecture i.e. the device layout is flat compared to the substrate. When vertical silicon nanowires are introduced in the semiconductor industry, a whole …

Plasmonic Effect On The Photoluminescence Of Inas Quantum Dot Nanostructures, David Fryauf

Electrical Engineering Undergraduate Honors Theses

New materials for thin film photovoltaic applications are being explored worldwide, and one of the most popular new implementations is the introduction of an intermediate band gap in the semiconductor energy structure. Careful manipulation of semiconductor lattice material can form nanostructures such as quantum dots, which can be tuned to control specific intermediate energy levels. The introduction of an intermediate band in photovoltaic devices has a theoretical potential sunlight-toelectricity efficiency of roughly 63%. However, a specific material challenge of these thin film devices is limited absorption of long wavelengths of light. To increase absorption of the sun's visible spectrum, plasmonic …