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Articles 1 - 19 of 19
Full-Text Articles in Engineering
Magnetic Properties Of Crystals Of La5Mo4-XTXO16, S. Lofland, Jason Hattrick-Simpers, K. Ramanujachary, W. Mccarroll
Magnetic Properties Of Crystals Of La5Mo4-XTXO16, S. Lofland, Jason Hattrick-Simpers, K. Ramanujachary, W. Mccarroll
Jason R. Hattrick-Simpers
No abstract provided.
Applications Of High Throughput Screening Tools For Thermoelectric Materials, W. Wong-Ng, H. Joress, J. Martin, Y. Yan, M. Otani, E. Thomas, M. Green, Jason Hattrick-Simpers
Applications Of High Throughput Screening Tools For Thermoelectric Materials, W. Wong-Ng, H. Joress, J. Martin, Y. Yan, M. Otani, E. Thomas, M. Green, Jason Hattrick-Simpers
Jason R. Hattrick-Simpers
No abstract provided.
Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. Long, O. Famodu, M. Murakami, Jason Hattrick-Simpers, G. Rubloff, M. Stukowski, K. Rajan
Data Management And Visualization Of X-Ray Diffraction Spectra From Thin Film Ternary Composition Spreads, I. Takeuchi, C. Long, O. Famodu, M. Murakami, Jason Hattrick-Simpers, G. Rubloff, M. Stukowski, K. Rajan
Jason R. Hattrick-Simpers
We discuss techniques for managing and visualizing x-ray diffraction spectrum data for thin film composition spreads which map large fractions of ternary compositional phase diagrams. An in-house x-ray microdiffractometer is used to obtain spectra from over 500 different compositions on an individual spread. The MATLAB software is used to quickly organize the data and create various plots from which one can quickly grasp different information regarding structural and phase changes across the composition spreads. Such exercises are valuable in rapidly assessing the “overall” picture of the structural evolution across phase diagrams before focusing in on specific composition regions for detailed …
High-Throughput Screening Of Magnetic Properties Of Quench Metallic-Alloy Thin-Film Composition Spreads, Jason Hattrick-Simpers, Cui Jun, Makoto Murakami, Antonio Orozco, Lee Knauss, Robert Booth, Edward Greve, Samuel Lofland, Manfred Wuttig, Ichiro Takeuchi
High-Throughput Screening Of Magnetic Properties Of Quench Metallic-Alloy Thin-Film Composition Spreads, Jason Hattrick-Simpers, Cui Jun, Makoto Murakami, Antonio Orozco, Lee Knauss, Robert Booth, Edward Greve, Samuel Lofland, Manfred Wuttig, Ichiro Takeuchi
Jason R. Hattrick-Simpers
No abstract provided.
Phase Transformation In An Yttrium-Hydrogen System Studied By Tem, K. Wang, Jason Hattrick-Simpers, L. Bendersky
Phase Transformation In An Yttrium-Hydrogen System Studied By Tem, K. Wang, Jason Hattrick-Simpers, L. Bendersky
Jason R. Hattrick-Simpers
No abstract provided.
Fabrication And Characterization Of In-Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. Chang, M. Aronova, O. Famodu, Jason Hattrick-Simpers, S. Lofland, I. Takeuchi, C. Lu, L. Bendersky, H. Chang
Fabrication And Characterization Of In-Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. Chang, M. Aronova, O. Famodu, Jason Hattrick-Simpers, S. Lofland, I. Takeuchi, C. Lu, L. Bendersky, H. Chang
Jason R. Hattrick-Simpers
No abstract provided.
Synthesis And Characterization Of Sr3Femoo6.88: An Oxygen-Deficient 2d Analogue Of The Double Perobskite Sr2Femoo6, Gabriel Veith, Martha Greenblatt, Mark Croft, K. Ramanujachary, Jason Hattrick-Simpers, Samuel Lofland, Israel Nowik
Synthesis And Characterization Of Sr3Femoo6.88: An Oxygen-Deficient 2d Analogue Of The Double Perobskite Sr2Femoo6, Gabriel Veith, Martha Greenblatt, Mark Croft, K. Ramanujachary, Jason Hattrick-Simpers, Samuel Lofland, Israel Nowik
Jason R. Hattrick-Simpers
No abstract provided.
Determination Of Work Functions In The Ta1-XAlXNY/Hfo2 Advanced Gate Stack Using Combinatorial Methodology, Kao-Shuo Chang, Martin Green, Jason Hattrick-Simpers, Ichiro Takeuchi, J. Suehle, O. Celik, S. De Gendt
Determination Of Work Functions In The Ta1-XAlXNY/Hfo2 Advanced Gate Stack Using Combinatorial Methodology, Kao-Shuo Chang, Martin Green, Jason Hattrick-Simpers, Ichiro Takeuchi, J. Suehle, O. Celik, S. De Gendt
Jason R. Hattrick-Simpers
No abstract provided.
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. Green, J. Suehle, E. Vogel, H. Xiong, Jason Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. Green, J. Suehle, E. Vogel, H. Xiong, Jason Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Jason R. Hattrick-Simpers
The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (ΔVfb) , work function (Φm) , and leakage current density (JL) variations. A more negative ΔVfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φm near the Ti-rich corners and higher Φm near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed Φm variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloymetal gate electrode systems.
High-Throughput Characterization Of Shape Memory Thin Films Using Automated Temperature-Dependent Resistance Measurements, Sigurd Thienhaus, Christiane Zamponi, Holger Rumpf, Jason Hattrick-Simpers, Ichiro Takeuchi, Alfred Ludwig
High-Throughput Characterization Of Shape Memory Thin Films Using Automated Temperature-Dependent Resistance Measurements, Sigurd Thienhaus, Christiane Zamponi, Holger Rumpf, Jason Hattrick-Simpers, Ichiro Takeuchi, Alfred Ludwig
Jason R. Hattrick-Simpers
No abstract provided.
Combinatorial Approach To Turbine Bond Coat Discovery, Christopher Metting, Johnathan Bunn, Ellen Underwood, Stephen Smoak, Jason Hattrick-Simpers
Combinatorial Approach To Turbine Bond Coat Discovery, Christopher Metting, Johnathan Bunn, Ellen Underwood, Stephen Smoak, Jason Hattrick-Simpers
Jason R. Hattrick-Simpers
No abstract provided.
Combinatorial Investigation Of Ferromagnetic Shape-Memory Alloys In The Ni-Mn-Al Ternary System Using A Composition Spread Technique, Olugbenga Famodu, Jason Hattrick-Simpers, Maria Aronova, Kao-Shou Chang, Makoto Murakami, Manfred Wuttig, Teiko Okazaki, Yasubumi Furuya, Lee Knauss, Leonid Bendersky, Frank Biaricaniello, Ichiro Takeuchi
Combinatorial Investigation Of Ferromagnetic Shape-Memory Alloys In The Ni-Mn-Al Ternary System Using A Composition Spread Technique, Olugbenga Famodu, Jason Hattrick-Simpers, Maria Aronova, Kao-Shou Chang, Makoto Murakami, Manfred Wuttig, Teiko Okazaki, Yasubumi Furuya, Lee Knauss, Leonid Bendersky, Frank Biaricaniello, Ichiro Takeuchi
Jason R. Hattrick-Simpers
No abstract provided.
Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. Yang, S.-Y. Young, Jason Hattrick-Simpers, M. Wuttig, L. Salamanca-Riba, I. Takeuchi
Enhanced Dielectric Properties In Single Crystal-Like Bifeo3 Thin Films Grown By Flux-Mediated Epitaxy, S.-H. Lim, M. Murakami, J. Yang, S.-Y. Young, Jason Hattrick-Simpers, M. Wuttig, L. Salamanca-Riba, I. Takeuchi
Jason R. Hattrick-Simpers
We have fabricated single crystal-like BiFeO3 (BFO) thin films by flux-mediated epitaxy using pulsed laser deposition(PLD). The Bi–Cu–O flux composition and its thickness were optimized using composition spread, thickness gradient, and temperature gradient libraries. The optimized BFO thin films grown with this technique showed larger grain size of ∼2μm and higher dielectric constant in the range of 260–340 than those for standard PLD grown films. In addition, the leakage current density of the films was reduced by two orders of magnitude compared to that of standard PLD grown films.
Tunable Multiferroic Properties In Nanocomposite Pbtio3-Cofe2O4 Epitaxial Thin Films, M. Murakami, K.-S. Chang, M. Aronova, C.-L. Lin, Ming Yu, Jason Hattrick-Simpers, M. Wuttig, I. Takeuchi, C. Gao, B. Hu, S. Lofland, L. Knauss, L. Bendersky
Tunable Multiferroic Properties In Nanocomposite Pbtio3-Cofe2O4 Epitaxial Thin Films, M. Murakami, K.-S. Chang, M. Aronova, C.-L. Lin, Ming Yu, Jason Hattrick-Simpers, M. Wuttig, I. Takeuchi, C. Gao, B. Hu, S. Lofland, L. Knauss, L. Bendersky
Jason R. Hattrick-Simpers
We report on the synthesis of PbTiO3–CoFe2O4 multiferroic nanocomposites and continuous tuning of their ferroelectric and magnetic properties as a function of the average composition on thin-film composition spreads. The highest dielectric constant and nonlinear dielectric signal was observed at (PbTiO3)85–(CoFe2O4)15, where robust magnetism was also observed. Transmission electron microscopy revealed a pancake-shaped epitaxial nanostructure of PbTiO3 on the order of 30 nm embedded in the matrix of CoFe2O4 at this composition. Composition dependent ferroics properties observed here indicate that there is considerable interdiffusion of cations into each other.
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Albert B Chen
Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …
Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen
Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen
Albert B Chen
Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.
Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman
Magnetic Properties Of Gamnas Nanodot Arrays Fabricated Using Porous Alumina Templates, S. Bennett, L. Menon, D. Heiman
Donald Heiman
Ordered arrays of GaMnAs magnetic semiconductor nanodots have been fabricated using anodic porous alumina templates as etch masks. The magnetic behavior is studied for prepared arrays with 40 nm dot diameter, 15 nm dot thickness, and 80 nm periodicity. The disklike nanodots exhibit an easy axis for fields applied in the radial direction and a hard axis in the smaller direction. In the radial direction superparamagnetism is observed with a blocking temperature of 30 K. The fabrication technique is convenient for preparing nanodot arrays of compound semiconductors that cannot be formed by self-assembly techniques.
A Parallel Circuit Model For Multi-State Resistive-Switching Random Access Memory, Albert Chen
A Parallel Circuit Model For Multi-State Resistive-Switching Random Access Memory, Albert Chen
Albert B Chen
Large, rapidly growing literature is available on bipolar resistive-switching random access memories (RRAM) made of myriad of simple and advanced materials. Many of them exhibit similar resistance switching behavior but, until now, no unifying model can allow quantification of their voltage and time responses. Using a simple parallel circuit model, these responses of a newly discovered RRAM made of a thin-film random material are successfully analyzed. The analysis clearly reveals a large population of intermediate states with remarkably similar switching characteristics. Such modeling framework based on simple circuit constructs also appears applicable to several RRAM made of other materials. This …
Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen
Albert B Chen
Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.